NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductor Materials
Sorted by: title

Displaying records 21 to 30 of 79 records.
Resort by: Date / Title

21. Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene
Topic: Semiconductor Materials
Published: 8/25/2011
Authors: Chad R Snyder, Dean M DeLongchamp, Jessica Shay Henry
Abstract: The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be prope ...

22. Electrical Conductivity and Relaxation in Poly(3-hexylthiophene)
Topic: Semiconductor Materials
Published: 11/25/2009
Authors: Jan Obrzut, Kirt Anthony Page
Abstract: ABSTRACT: We studied the complex conductivity of regio-regular poly(3-hexylthiophene) (P3HT) in the temperature range between 193K to 333 K (-80 C to 60 C) and in the frequency range from the direct current (DC) to 12 GHz. The identified relaxation ...

23. Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Semiconductor Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun W. Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach

24. Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers
Topic: Semiconductor Materials
Published: 11/15/2009
Authors: Lawrence P. Cook, Richard E Cavicchi, Nabil Bassim, Susie Eustis, Winnie K Wong-Ng, Igor Levin, Ursula R Kattner, Carelyn E Campbell, Christopher B Montgomery, William F. Egelhoff Jr., Mark D Vaudin
Abstract: We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower ...

25. Enriching 28Si beyond 99.9998 % for semiconductor quantum computing
Topic: Semiconductor Materials
Published: 8/5/2014
Authors: Kevin Joseph Dwyer, Joshua M Pomeroy, David S Simons, June Waiyin Lau, Kristen L Steffens
Abstract: Using a laboratory-scale apparatus, we enrich 28Si to 40 times better than previously reported starting from natural abundance silane gas and offer another source for providing these critical materials from the industrial gas centrifuge methods. ...

26. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Topic: Semiconductor Materials
Published: 1/8/2014
Authors: Christopher W. Petz, Dongyue Yang, Alline F Myers, Jeremey Levy, Jerrold Floro
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 3 ...

27. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Topic: Semiconductor Materials
Published: 3/10/2014
Authors: John B Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperatu ...

28. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Semiconductor Materials
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul Timothy Blanchard, John B Schlager, Aric Warner Sanders, Alexana Roshko, Shannon Marie Madison Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...

29. Graphene - Is it the future for Semiconductors? A High Level Overview of Materials, Devices and Applications.
Topic: Semiconductor Materials
Published: 4/11/2011
Authors: Yaw S Obeng, P Srinivasan
Abstract: In this paper, we attempt to summarize the graphene component of the first two of the GRAPHENE, Ge/III-V AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS symposia [1, 2]. While not exhaustive and complete, a review of the papers presented at these s ...

30. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Topic: Semiconductor Materials
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series