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Displaying records 11 to 20 of 46 records.
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11. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...

12. Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Semiconductor Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun Wook Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach

13. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Topic: Semiconductor Materials
Published: 1/8/2014
Authors: Christopher W. Petz, Dongyue Yang, Alline F Myers, Jeremey Levy, Jerrold Floro
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 3 ...

14. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Topic: Semiconductor Materials
Published: 3/10/2014
Authors: John B. Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperatu ...

15. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Semiconductor Materials
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul T Blanchard, John B. Schlager, Aric Warner Sanders, Alexana Roshko, Shannon M.M. Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...

16. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Topic: Semiconductor Materials
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...

17. In situ electrochemical small-angle neutron scattering (eSANS) for quantitative structure and redox properties of nanoparticles
Topic: Semiconductor Materials
Published: 2/16/2012
Authors: Vivek M Prabhu, Vytautas Reipa
Abstract: Rapid growth in nanomaterial applications highlight limitations of available physicochemical characterization methods. An in situ electrochemical small-angle neutron scattering (eSANS) meth-odology was devised that enables direct measurements of nano ...

18. In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
Topic: Semiconductor Materials
Published: 2/14/2015
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first seque ...

19. Integrating carbon nanotubes as vias in a monolithic 3DIC process
Topic: Semiconductor Materials
Published: 3/21/2013
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Johan van der Cingel , Kees Beenakker

20. Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer
Topic: Semiconductor Materials
Published: 6/26/2014
Authors: Hyuk-Jae Jang, Sujitra Jeanie Pookpanratana, Alyssa N. Brigeman, Regis J Kline, James I. Basham, David J Gundlach, Christina Ann Hacker, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual ...

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