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Topic Area: Semiconductor Materials
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Displaying records 11 to 20 of 75 records.
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11. Challenges and Opportunities of Organic Electronics
Topic: Semiconductor Materials
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

12. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductor Materials
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704

13. Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures
Topic: Semiconductor Materials
Published: 4/8/2013
Authors: Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Abstract: Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913546

14. Decoupling small-scale roughness and long-range features on deep reactive ion etched silicon surfaces
Topic: Semiconductor Materials
Published: 9/19/2013
Authors: Frank W DelRio, Lawrence H Friedman, Michael S. Gaither, William A Osborn, Robert Francis Cook
Abstract: Roughness scaling of three different deep reactive ion etched (DRIE) silicon surfaces is investigated using atomic force microscopy. At small distances, height-height correlations H reveal power-law behavior with equal scaling exponents for all surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913812

15. Degradation of photovoltaic devices at high concentration by space charge limited currents
Topic: Semiconductor Materials
Published: 10/1/2013
Authors: Ari D Feldman, Richard K. Ahrenkiel, John H Lehman
Abstract: High-injection mobility reduction is examined by theory, modeling, and experimental data acquired by resonance coupled photoconductive decay (RCPCD). The ambipolar mobility is shown to reduce to zero when the constituent injection-dependent carr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912013

16. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Topic: Semiconductor Materials
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906105

17. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908715

18. Effect of Organic SAMs on the Evolution of Strength of Silicon Nanostructures
Topic: Semiconductor Materials
Published: 6/3/2016
Authors: Scott Grutzik, Brian G Bush, Frank W DelRio, Richard Swift Gates, Melissa Hines, Alan Zehnder
Abstract: The ability to accurately predict the strength of nanoscale, single crystal structures is critical in micro- and nano-electromechanical systems (MEMS and NEMS) design. Because of the small length scales involved failure does not always follow the sam ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913502

19. Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene
Topic: Semiconductor Materials
Published: 8/25/2011
Authors: Chad R Snyder, Dean M DeLongchamp, Jessica Shay Henry
Abstract: The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be prope ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908802

20. Electrical Conductivity and Relaxation in Poly(3-hexylthiophene)
Topic: Semiconductor Materials
Published: 11/25/2009
Authors: Jan Obrzut, Kirt Anthony Page
Abstract: ABSTRACT: We studied the complex conductivity of regio-regular poly(3-hexylthiophene) (P3HT) in the temperature range between 193K to 333 K (-80 C to 60 C) and in the frequency range from the direct current (DC) to 12 GHz. The identified relaxation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904103



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