NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductor Materials
Sorted by: date

Displaying records 31 to 40 of 79 records.
Resort by: Date / Title

31. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...

32. Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene
Topic: Semiconductor Materials
Published: 8/25/2011
Authors: Chad R Snyder, Dean M DeLongchamp, Jessica Shay Henry
Abstract: The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be prope ...

33. Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns
Topic: Semiconductor Materials
Published: 6/24/2011
Authors: Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -W Spiess, Paul A Heiney, Steven D Hudson
Abstract: The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of ...

34. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Topic: Semiconductor Materials
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...

35. A new interface defect spectroscopy method
Topic: Semiconductor Materials
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser

36. Graphene - Is it the future for Semiconductors? A High Level Overview of Materials, Devices and Applications.
Topic: Semiconductor Materials
Published: 4/11/2011
Authors: Yaw S Obeng, P Srinivasan
Abstract: In this paper, we attempt to summarize the graphene component of the first two of the GRAPHENE, Ge/III-V AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS symposia [1, 2]. While not exhaustive and complete, a review of the papers presented at these s ...

37. Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films
Topic: Semiconductor Materials
Published: 1/1/2011
Authors: J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A Bertness, S M George, Victor M. Bright, C. T. Rogers, Norman A Sanford
Abstract: Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000‹100,000. We report on singly-clamped NW mechanic ...

38. Zone-Refinement Effect in Small Molecule‹Polymer Blend Semiconductors for Organic Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/14/2010
Authors: Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek M Prabhu, Regis J Kline, John E Anthony, Do Y Yoon
Abstract: The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over ...

39. Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)
Topic: Semiconductor Materials
Published: 11/2/2010
Authors: Jessica M. Torres, Nathan Bakken, Christopher M Stafford, Jian Li, Vogt D Bryan
Abstract: The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular ...

40. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductor Materials
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series