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Topic Area: Semiconductor Materials
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Displaying records 21 to 30 of 75 records.
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21. Tin Oxide Nanowire Sensor with Integrated Temperature and Gate Control for Multi-Gas Recognition
Topic: Semiconductor Materials
Published: 3/7/2012
Authors: Eric N. (Eric) Dattoli, Albert Davydov, Kurt D Benkstein
Abstract: The selectivity of a chemiresistive gas sensor comprising an aligned array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by utili ...

22. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Topic: Semiconductor Materials
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...

23. In situ observation of the indentation-induced phase transformation of silicon thin films
Topic: Semiconductor Materials
Published: 3/5/2012
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Aaron M Forster, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman microspectroscopy of the deformed contact region of silicon on sapphire samples during contact loading and unloading. During loading, the formation of Si-II and another ...

24. In situ electrochemical small-angle neutron scattering (eSANS) for quantitative structure and redox properties of nanoparticles
Topic: Semiconductor Materials
Published: 2/16/2012
Authors: Vivek M Prabhu, Vytautas Reipa
Abstract: Rapid growth in nanomaterial applications highlight limitations of available physicochemical characterization methods. An in situ electrochemical small-angle neutron scattering (eSANS) meth-odology was devised that enables direct measurements of nano ...

25. Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides
Topic: Semiconductor Materials
Published: 11/16/2011
Authors: Virgil Percec, Steven D Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -W Spiess, Xiangbing Zeng, Goran Ungar, Paul A Heiney
Abstract: The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecule ...

26. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...

27. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...

28. Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene
Topic: Semiconductor Materials
Published: 8/25/2011
Authors: Chad R Snyder, Dean M DeLongchamp, Jessica Shay Henry
Abstract: The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be prope ...

29. Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns
Topic: Semiconductor Materials
Published: 6/24/2011
Authors: Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -W Spiess, Paul A Heiney, Steven D Hudson
Abstract: The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of ...

30. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Topic: Semiconductor Materials
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...

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