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Topic Area: Semiconductor Materials
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Displaying records 21 to 30 of 71 records.
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21. Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides
Topic: Semiconductor Materials
Published: 11/16/2011
Authors: Virgil Percec, Steven D Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -W Spiess, Xiangbing Zeng, Goran Ungar, Paul A Heiney
Abstract: The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecule ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909636

22. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

23. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908715

24. Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene
Topic: Semiconductor Materials
Published: 8/25/2011
Authors: Chad R Snyder, Dean M DeLongchamp, Jessica Shay Henry
Abstract: The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be prope ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908802

25. Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns
Topic: Semiconductor Materials
Published: 6/24/2011
Authors: Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -W Spiess, Paul A Heiney, Steven D Hudson
Abstract: The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908817

26. Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Topic: Semiconductor Materials
Published: 5/31/2011
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906105

27. A new interface defect spectroscopy method
Topic: Semiconductor Materials
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

28. Graphene - Is it the future for Semiconductors? A High Level Overview of Materials, Devices and Applications.
Topic: Semiconductor Materials
Published: 4/11/2011
Authors: Yaw S Obeng, P Srinivasan
Abstract: In this paper, we attempt to summarize the graphene component of the first two of the GRAPHENE, Ge/III-V AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS symposia [1, 2]. While not exhaustive and complete, a review of the papers presented at these s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907706

29. Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films
Topic: Semiconductor Materials
Published: 1/1/2011
Authors: J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A Bertness, S M George, Victor M. Bright, C. T. Rogers, Norman A Sanford
Abstract: Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000‹100,000. We report on singly-clamped NW mechanic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903757

30. Zone-Refinement Effect in Small Molecule‹Polymer Blend Semiconductors for Organic Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/14/2010
Authors: Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek M Prabhu, Regis J Kline, John E Anthony, Do Y Yoon
Abstract: The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906520



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