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Topic Area: Semiconductor Materials
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Displaying records 21 to 30 of 79 records.
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21. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

22. Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors
Topic: Semiconductor Materials
Published: 8/27/2012
Authors: Nayool Shin, Dean M DeLongchamp, Jihoon Kang, Regis J Kline, Lee J Richter, Vivek M Prabhu, Balaji Purushothamanc, John E Anthony, Do Y Yoon
Abstract: The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film trans ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906842

23. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853

24. Contact resistance of low-temperature carbon nanotube vertical interconnects
Topic: Semiconductor Materials
Published: 8/20/2012
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker
Abstract: In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scannin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911548

25. Tin Oxide Nanowire Sensor with Integrated Temperature and Gate Control for Multi-Gas Recognition
Topic: Semiconductor Materials
Published: 3/7/2012
Authors: Eric N. (Eric) Dattoli, Albert Davydov, Kurt D Benkstein
Abstract: The selectivity of a chemiresistive gas sensor comprising an aligned array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by utili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909477

26. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Topic: Semiconductor Materials
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

27. In situ observation of the indentation-induced phase transformation of silicon thin films
Topic: Semiconductor Materials
Published: 3/5/2012
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Aaron M Forster, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman microspectroscopy of the deformed contact region of silicon on sapphire samples during contact loading and unloading. During loading, the formation of Si-II and another ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910047

28. In situ electrochemical small-angle neutron scattering (eSANS) for quantitative structure and redox properties of nanoparticles
Topic: Semiconductor Materials
Published: 2/16/2012
Authors: Vivek M Prabhu, Vytautas Reipa
Abstract: Rapid growth in nanomaterial applications highlight limitations of available physicochemical characterization methods. An in situ electrochemical small-angle neutron scattering (eSANS) meth-odology was devised that enables direct measurements of nano ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909405

29. Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides
Topic: Semiconductor Materials
Published: 11/16/2011
Authors: Virgil Percec, Steven D Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -W Spiess, Xiangbing Zeng, Goran Ungar, Paul A Heiney
Abstract: The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecule ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909636

30. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908



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