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Topic Area: Semiconductor Materials

Displaying records 11 to 20 of 75 records.
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11. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

12. Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures
Topic: Semiconductor Materials
Published: 4/8/2013
Authors: Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Abstract: Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913546

13. Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Topic: Semiconductor Materials
Published: 3/26/2013
Authors: William A Osborn, Lawrence H Friedman, Mark D Vaudin, Stephan J Stranick, Michael S. Gaither, Justin M Gorham, Victor Vartanian, Robert Francis Cook
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913178

14. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
Topic: Semiconductor Materials
Published: 3/12/2013
Authors: Ari D Feldman, John H Lehman, Richard K. Ahrenkiel
Abstract: The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-ty ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911502

15. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Semiconductor Materials
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911884

16. Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates
Topic: Semiconductor Materials
Published: 1/16/2013
Authors: Matthew David Brubaker, Paul Timothy Blanchard, John B Schlager, Aric Warner Sanders, Alexana Roshko, Shannon Marie Madison Duff, Jason Gray, Victor M. Bright, Norman A Sanford, Kristine A Bertness
Abstract: In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epita ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912280

17. Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials
Topic: Semiconductor Materials
Published: 10/26/2012
Authors: Adam J. Berro, Andrew J. Berglund, Peter T. (Peter T) Carmichael, Jong Seung Kim, James Alexander Liddle
Abstract: Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is one of the most important factors ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909231

18. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

19. Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors
Topic: Semiconductor Materials
Published: 8/27/2012
Authors: Nayool Shin, Dean M DeLongchamp, Jihoon Kang, Regis J Kline, Lee J Richter, Vivek M Prabhu, Balaji Purushothamanc, John E Anthony, Do Y Yoon
Abstract: The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film trans ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906842

20. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853



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