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You searched on: Topic Area: Semiconductor Materials

Displaying records 1 to 10 of 48 records.
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1. Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics
Topic: Semiconductor Materials
Published: 4/25/2016
Authors: Junwen Li, Paul M Haney
Abstract: Organic-inorganic halide CH^d3^NH^d3^PbI^d3^ solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919936

2. In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films
Topic: Semiconductor Materials
Published: 4/19/2016
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: The pressure induced phase transitions of crystalline Si films was studied in situ under a Berkovich probe using the Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920074

3. Modifying spin injection characteristics in the Co/Alq3 system by using a molecular self-assembled monolayer
Topic: Semiconductor Materials
Published: 5/19/2015
Authors: Hyuk-Jae Jang, Jun-Sik Lee, Sujitra Jeanie Pookpanratana, Ich C. Tran, Curt A Richter, Christina Ann Hacker
Abstract: We present the results of experiments that explore the influence of molecular self-assembled monolayers (SAMs) on characteristics of spin injection into an organic semiconductor, Alq3 [tris-(8-hydroxyquinoline) aluminum] from a ferromagnetic metal, C ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917614

4. In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
Topic: Semiconductor Materials
Published: 2/14/2015
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first seque ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916253

5. Microwave Near-Field Imaging of Two-Dimensional Semiconductors
Topic: Semiconductor Materials
Published: 1/27/2015
Authors: Samuel Berweger, Joel C Weber, Jimmy J. Li, Jesus M Velazquez, Adam Pieterick, Norman A Sanford, Albert V. Davydov, Thomas M Wallis, Pavel Kabos
Abstract: Optimizing new generations of 2D devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917367

6. Design and test of reliable, high strength, ingressive polycrystalline silicon microgripper arrays
Topic: Semiconductor Materials
Published: 1/2/2015
Authors: Siddharth Hazra, J L Beuth, Grant A. Myers, Frank W DelRio, Maarten de Boer
Abstract: We present the design and extensive validation of a micromachined gripper array that enables reliable transmission of forces up to 10 milliNewtons. The gripper is constructed with polycrystalline silicon, a brittle material. Two ingressive snap-a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916443

7. Particle-based simulation of nanoscale systems and materials
Topic: Semiconductor Materials
Published: 1/1/2015
Authors: Alexander Y Smolyanitsky, Vinod K Tewary
Abstract: This book chapter is focused on the introduction of molecular dynamics (MD) and molecular statics (MS), as well as some of their uses for studying the thermomechanical and (indirectly) electronic properties at the nanoscale. We first introduce th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914989

8. Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Topic: Semiconductor Materials
Published: 11/21/2014
Authors: Wei Li, Glen Birdwell, Matin Amani, Yi-Hsien Lee, Ling Xi, Xuelei Liang, Lianmao Peng, Curt A Richter, Kong Jing, David J Gundlach, Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915849

9. Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer
Topic: Semiconductor Materials
Published: 6/26/2014
Authors: Hyuk-Jae Jang, Sujitra Jeanie Pookpanratana, Alyssa N. Brigeman, Regis J Kline, James I. Basham, David J Gundlach, Christina Ann Hacker, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914774

10. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Topic: Semiconductor Materials
Published: 3/10/2014
Authors: John B. Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperatu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914797



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