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Topic Area: Semiconductor Materials

Displaying records 1 to 10 of 74 records.
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1. Effect of Organic SAMs on the Evolution of Strength of Silicon Nanostructures
Topic: Semiconductor Materials
Published: 6/3/2016
Authors: Scott Grutzik, Brian G Bush, Frank W DelRio, Richard Swift Gates, Melissa Hines, Alan Zehnder
Abstract: The ability to accurately predict the strength of nanoscale, single crystal structures is critical in micro- and nano-electromechanical systems (MEMS and NEMS) design. Because of the small length scales involved failure does not always follow the sam ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913502

2. Enriching 28Si beyond 99.9998 % for semiconductor quantum computing
Topic: Semiconductor Materials
Published: 8/5/2014
Authors: Kevin Joseph Dwyer, Joshua M Pomeroy, David S Simons, June Waiyin Lau, Kristen L Steffens
Abstract: Using a laboratory-scale apparatus, we enrich 28Si to 40 times better than previously reported starting from natural abundance silane gas and offer another source for providing these critical materials from the industrial gas centrifuge methods. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915236

3. Raman spectroscopy-enhanced IIT: In situ analysis of mechanically stressed polycrystalline Si thin films
Topic: Semiconductor Materials
Published: 7/8/2014
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Exposed to mechanical stress, semiconductor materials may phase transform, resulting in changes of crystallographic structure and material properties, rather than deform by plastic flow. As a consequence, prediction of the state and distribution of s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915665

4. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Topic: Semiconductor Materials
Published: 3/10/2014
Authors: John B Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperatu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914797

5. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Topic: Semiconductor Materials
Published: 1/8/2014
Authors: Christopher W. Petz, Dongyue Yang, Alline F Myers, Jeremey Levy, Jerrold Floro
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 3 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914443

6. Degradation of photovoltaic devices at high concentration by space charge limited currents
Topic: Semiconductor Materials
Published: 10/1/2013
Authors: Ari D Feldman, Richard K. Ahrenkiel, John H Lehman
Abstract: High-injection mobility reduction is examined by theory, modeling, and experimental data acquired by resonance coupled photoconductive decay (RCPCD). The ambipolar mobility is shown to reduce to zero when the constituent injection-dependent carr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912013

7. Decoupling small-scale roughness and long-range features on deep reactive ion etched silicon surfaces
Topic: Semiconductor Materials
Published: 9/19/2013
Authors: Frank W DelRio, Lawrence H Friedman, Michael S. Gaither, William A Osborn, Robert Francis Cook
Abstract: Roughness scaling of three different deep reactive ion etched (DRIE) silicon surfaces is investigated using atomic force microscopy. At small distances, height-height correlations H reveal power-law behavior with equal scaling exponents for all surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913812

8. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Topic: Semiconductor Materials
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913440

9. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467

10. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241



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