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You searched on: Topic Area: Nanomanufacturing Sorted by: date

Displaying records 11 to 20 of 44 records.
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11. Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects
Topic: Nanomanufacturing
Published: 11/13/2013
Authors: Norman A Sanford, David R Diercks, Brian Gorman, R Kirchofer, Kristine A Bertness, Matthew David Brubaker
Abstract: The field evaporation behavior of c-axis GaN nanowires was explored in two different laser-pulsed atom probe tomography (APT) instruments. Transmission electron microscopy imaging before and after atom probe tomography analysis was used to assist in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915760

12. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Topic: Nanomanufacturing
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914244

13. On the Field Evaporation Behavior of c-axis GaN Nanowires in Laser-Pulsed Atom Probe Tomography
Topic: Nanomanufacturing
Published: 6/26/2013
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Brian Gorman, David R Diercks, R Kirchofer
Abstract: GaN has seen use in many applications such as photovoltaics, blue and ultraviolet lasers, and light-emitting diodes with additional research into expanded and new applications. GaN in the form of nanowires present additional possibilities due to th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913334

14. Size-independent effects on nanoparticle retention behavior in asymmetric flow field-flow fractionation
Topic: Nanomanufacturing
Published: 5/29/2013
Authors: Julien C. Gigault, Vincent A Hackley
Abstract: In this work we highlight the size-independent influence of the material properties of nanoparticles on their retention behavior in asymmetric-flow field-flow fractionation (A4F). The phenomena described here suggest there are limits to the effec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913433

15. Block-copolymer healing of simple defects in a chemoepitaxial template
Topic: Nanomanufacturing
Published: 4/11/2013
Authors: Paul N Patrone, Gregg M. Gallatin
Abstract: Using a phase-field model of block copolymers (BCPs), we characterize how a chemoepitaxial template with parallel lines of arbitrary width affects the BCP microdomain shape. The model, which is an extension of the Leibler-Ohta-Kawasaki theory, accoun ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913545

16. Creating large out-of-plane displacement electrothermal motion stage by incorporating beams with step features
Topic: Nanomanufacturing
Published: 3/26/2013
Authors: Yong Sik Kim, Nicholas G Dagalakis, Satyandra K. Gupta
Abstract: Realizing out-of-plane actuation in micro-electro-mechanical systems (MEMS) is still a challenging task. In this paper, the design, fabrication methods and experimental results for a MEMS-based out-of-plane motion stage is presented based on bulk mic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913234

17. Preface, Introduction and Chapter 11 to appear in the book Control from MEMS to Atoms
Topic: Nanomanufacturing
Published: 12/31/2012
Authors: Jason John Gorman, Benjamin Shapiro
Abstract: Preface Abstract: This is the preface of the book. No abstract is available. Introduction Abstract: The goal of this book is to show how control systems can be successfully applied to applications in micro- and nanosystems, to explore the wide v ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907965

18. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Topic: Nanomanufacturing
Published: 8/27/2012
Authors: Christopher M. Dodson, Patrick Parkinson, Kristine A Bertness, Hannah J Joyce, Laura M Herz, Norman A Sanford, Michael B Johnston
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911320

19. Contour Metrology using Critical Dimension Atomic Force Microscopy
Topic: Nanomanufacturing
Published: 4/9/2012
Authors: Ndubuisi George Orji, Ronald G Dixson, Andras Vladar, Bin Ming, Michael T Postek
Abstract: The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a supplemental instrument for contour measurement and verification. However, although data from CD-AFM is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910915

20. Catalyst-free GaN Nanowires as Nanoscale Light Emitters
Topic: Nanomanufacturing
Published: 3/1/2012
Authors: Kristine A Bertness, Norman A Sanford, John B. Schlager, Alexana Roshko, Todd E Harvey, Paul T Blanchard, Matthew David Brubaker, Andrew M. Herrero, Aric Warner Sanders
Abstract: Catalyst-free growth of GaN nanowires with molecular beam epitaxy produces material of exceptionally high quality with long minority carrier lifetimes and low surface recombination velocity. The nanowires grow by thermodynamic driving forces that enh ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910889



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