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Topic Area: Metrology
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Displaying records 841 to 846.
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841. Workshop Report 3: Edge Positions From Scanning Electron Microscope Signals by Comparing Models With Measure
Topic: Metrology
Published: 8/6/1995
Authors: J R. Lowney, Michael T Postek, Andras Vladar
Abstract: There is a pressing need in the semiconductor industry to determine the dimensions of lithographically produced features on wafers and masks down to the l0?nm level of accuracy. Such measurements involve the accurate location of line edges, the subtr ...

842. Workshop Summary Report: Scanning Probe Nanolithography Workshop
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7040
Topic: Metrology
Published: 1/1/2003
Authors: John A. Dagata, H Yokoyama, F Perez-murano
Abstract: A workshop on Scanning Probe Microscope (SPM)-based Nanolithography was held at NIST Gaithersburg on November 24-25, 2003.  The meeting was sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Rese ...

843. Workshop on Advanced Methods and Models for Appearance of Coatings and Coated Objects
Topic: Metrology
Published: 7/1/1997
Authors: A Thompson, Theodore Vincent Vorburger, J Martin, M E. McKnight, Michael A Galler, R Lipman, Fern Y Hunt
Abstract: This is a conference report on the Workshop on Advanced Methods and Models for Appearance of Coatings and Coated Objects held at Gaithersburg, MD, May 20, 1996.

844. X-ray Scattering and Fluorescence From Atoms and Molecules
Topic: Metrology
Published: 1/1/2000
Authors: S H Southworth, L Young, E P Kanter, Thomas W LeBrun
Abstract: Fundamental understanding of x-ray interactions with atoms and molecules provides a basis for applying x-ray methods to complex materials, such as structural determinations by x-ray diffraction and extended x-ray absorption fine structure. Compton sc ...

845. XUV Optics Characterization at the National Institute of Standards and Technology
Topic: Metrology
Published: 1/1/1993
Authors: R N. Watts, Charles S Tarrio, Thomas B Lucatorto, R P. Madden, R Deslattes, Ariel Caticha, William Tyler Estler, Christopher J. Evans, T. McWade, Joseph Fu, Theodore Vincent Vorburger
Abstract: Abstract not available.

846. Zero-Order Imaging of Device-Sized Overlay Targets Using Scatterfield Microscopy
Topic: Metrology
Published: 3/1/2007
Authors: Bryan M Barnes, Lowell P. Howard, P Lipscomb, Richard M Silver
Abstract: Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die.  The NIST Scatterfield Targets feature groupings of eight lines and/or tren ...

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