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Topic Area: Metrology
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Displaying records 841 to 850 of 851 records.
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841. U.S. Navy Coordinate Measuring Machines: A Study of Needs
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5379
Topic: Metrology
Published: 1/1/1994
Authors: David C Stieren, Ralph C. Veale, Howard H. Harary, Shaw C Feng
Abstract: Abstract not available.

842. Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry
Topic: Metrology
Published: 1/1/1994
Authors: J. Bennett, John A. Dagata
Abstract: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10? ...

843. Uncertainties in Dimensional Measurements Made at Nonstandard Temperatures
Topic: Metrology
Published: 1/1/1994
Author: Dennis A Swyt
Abstract: This report examines the effects of uncertainties in temperature and coefficient of thermal expansion on the expanded uncertainty of length dimensional measurements made away from the international standard reference temperature of 20degrees C for ar ...

844. Variations in Size Measurements by Indicating Gaging Systems
Topic: Metrology
Published: 1/1/1994
Authors: Ralph C. Veale, A Strang, S Merrit, H Chou
Abstract: The National Institute of Standards and Technology has investigated the efficacy of indicating gaging systems used to measure pitch diameter and functional size of threaded fasteners. Three external systems and four internal systems, representing fou ...

845. Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Topic: Metrology
Published: 9/5/1993
Authors: H. W. Tseng, John A. Dagata, Richard M Silver, Joseph Fu, J R. Lowney
Abstract: Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetric ...

846. Proposed Coating Technology Consortium
Topic: Metrology
Published: 4/1/1993
Author: Theodore Vincent Vorburger
Abstract: Abstract not available.

847. Regimes of Surface Roughness Measurable with Light Scattering
Topic: Metrology
Published: 1/1/1993
Authors: Theodore Vincent Vorburger, Egon Marx, T Lettieri
Abstract: In this paper we summarize a number of previous experiments on the measurement of the roughness of metallic surfaces by light scattering. We identify several regimes that permit measurement of different surface parameters and functions, and we establ ...

848. Surface Metrology of Soft X-ray Optics
Topic: Metrology
Published: 1/1/1993
Authors: Theodore Vincent Vorburger, T. McWade, Joseph Fu, Christopher J. Evans, William Tyler Estler, R Parks
Abstract: Abstract not available.

849. XUV Optics Characterization at the National Institute of Standards and Technology
Topic: Metrology
Published: 1/1/1993
Authors: R N. Watts, Charles S Tarrio, Thomas B Lucatorto, R P. Madden, R Deslattes, Ariel Caticha, William Tyler Estler, Christopher J. Evans, T. McWade, Joseph Fu, Theodore Vincent Vorburger
Abstract: Abstract not available.

850. Establishing a World-Wide Unified Rockwell Hardness Scale Using Standard Diamond Indenters
Topic: Metrology
Published: Date unknown
Authors: S Desogus, A Germak, H Ishida, T Polzin, H Yang, Jun-Feng Song, Samuel Rea Low III, David J Pitchure
Abstract: Recently developed microform measurement techniques have reduced the measurement uncertainties in the geometry of Rockwell diamond indenters. It is now possible to establish standard grade Rockwell diamond indenters characterized by high geometry uni ...

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