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Displaying records 101 to 110 of 156 records.
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101. On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)
Topic: Semiconductors
Published: 8/1/2006
Authors: Javier Salcedo, Juin J Liou, Muhammad Yaqub Afridi, Allen R Hefner Jr.
Abstract: An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyris ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31900

102. Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition
Topic: Semiconductors
Published: 11/17/2005
Authors: Nhan V Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Abstract: Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Elec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31774

103. Optical Properties of Semiconductors
Topic: Semiconductors
Published: 10/19/2009
Authors: David G Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Abstract: Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33124

104. Optical illumination optimization for patterned defect inspection
Topic: Semiconductors
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui H. Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

105. Organic Electronics: Challenges and Opportunities
Topic: Semiconductors
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

106. Organic single crystal field-effect transistors of a soluble anthradithiophene
Topic: Semiconductors
Published: 10/22/2008
Authors: Oana Jurchescu, Sankar Subramanian, R J Kline, Steven D Hudson, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: We use single crystals (grown by physical vapor transport) of a soluble oligomer to obtain a better understanding of the intrinsic properties, limitations and potential of these materials. Single crystals are well-suited for studies exploring the eff ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32830

107. Oxide Reliability of SiC MOS Devices
Topic: Semiconductors
Published: 10/12/2008
Authors: Liangchun Yu, Kin P Cheung, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900182

108. PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic
Topic: Semiconductors
Published: 11/13/2014
Authors: Jiwu Lu, Canute Irwin Vaz, Guangfan Jiao, Jason P Campbell, Jason T Ryan, Kin P Cheung, Gennadi Bersuker, Chadwin D. Young
Abstract: Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915964

109. Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules
Topic: Semiconductors
Published: 3/3/2008
Author: Allen R Hefner Jr.
Abstract: Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32930

110. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441



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