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Topic Area: Semiconductors
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Displaying records 101 to 110 of 149 records.
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101. Oxide Reliability of SiC MOS Devices
Topic: Semiconductors
Published: 10/12/2008
Authors: Liangchun Yu, Kin P Cheung, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900182

102. Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules
Topic: Semiconductors
Published: 3/3/2008
Author: Allen R Hefner Jr
Abstract: Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32930

103. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

104. Physical Model for Random Telegraph Noise Amplitudes and Implications
Topic: Semiconductors
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

105. Physics Careers in Government Agencies
Topic: Semiconductors
Published: 3/14/2010
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905142

106. Planning Report 07-2: Economic Impact of Measurement in the Semiconductor Industry
Series: OTHER
Report Number: 07-2
Topic: Semiconductors
Published: 12/31/2007
Author: Gregory C. Tassey
Abstract: The semiconductor industry has long been a driving force behind major advances in computing and electronics. Advances in the speed of processing power have enabled individuals and companies to create, access, and analyze data rapidly, improving ind ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912236

107. Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants
Topic: Semiconductors
Published: 8/7/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902439

108. Probing Single Nanometer-Scale Pores with Polymeric Molecular Rulers
Topic: Semiconductors
Published: 4/2/2010
Authors: Sarah E Henrickson, Edmund A DiMarzio, Qian Wang, Vincent M Stanford, John J Kasianowicz
Abstract: It has been shown that individual molecules of single stranded DNA can be driven electrophoretically through a single Staphylococcus aureus ?-hemolysin ion channel. Polynucleotides thread through the channel as extended chains and the polymer-induced ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32215

109. RF, Analog and Mixed Signal Technologies for Communication ICs - an ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: W M. Huang, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32241

110. RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: Margaret Huang, Herbert S Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
Abstract: The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32426



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