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Topic Area: Semiconductors
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Displaying records 21 to 30 of 144 records.
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21. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Semiconductors
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

22. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Topic: Semiconductors
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909230

23. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Semiconductors
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

24. Optical illumination optimization for patterned defect inspection
Topic: Semiconductors
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

25. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

26. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

27. Development, Performance and Applications of 4.5 kV SiC JBS Diodes
Topic: Semiconductors
Published: 3/22/2011
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908466

28. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470

29. US Anti-Counterfeiting Standards Development Activities: An Overview
Topic: Semiconductors
Published: 12/1/2010
Authors: Yaw S Obeng, Eric D Simmon, YaShian Li-Baboud
Abstract: Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907215

30. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductors
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704



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