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Topic Area: Semiconductors
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Displaying records 111 to 120 of 144 records.
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111. Government Jobs for Physicists: Believe It or Not Challenging and Satisfying!
Topic: Semiconductors
Published: 5/30/2006
Author: David G Seiler
Abstract: This presentation details the benefits of government positions for physicists based on the experiences of a NIST Division Chief.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32273

112. Nonlinear charge transport in semiconducting polythiophene
Topic: Semiconductors
Published: 5/23/2006
Author: Jan Obrzut
Abstract: We measured the complex impedance and nonlinear conductivity for regioregular poly(3-hexylthiophene) (P3HT) by recording and analyzing AC waveforms at their fundamental frequency and at higher order harmonic frequencies. We used 50 µm thick films of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854043

113. Facilitating the Culture of Mammalian Nerve Cells with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 5/19/2006
Authors: Samuel P Forry, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32339

114. RM 8111: Development of a Prototype Linewidth Standard
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 5/1/2006
Authors: Michael W Cresswell, William Gutherie, R. Dixon, Richard A Allen, Christine E. Murabito, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32585

115. Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference
Topic: Semiconductors
Published: 4/1/2006
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Richard A Allen, Michael W Cresswell
Abstract: A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32169

116. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009

117. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32176

118. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Topic: Semiconductors
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

119. Microhotplate-Based Sensor Platform for Submicron SoC Designs
Topic: Semiconductors
Published: 12/9/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Jon C Geist, Colleen E. Hood, Ankush Varma, Bruce Jacob
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32489

120. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Topic: Semiconductors
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31903



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