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Topic Area: Semiconductors
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Displaying records 111 to 120 of 147 records.
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111. RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: Margaret Huang, Herbert S Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
Abstract: The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32426

112. On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)
Topic: Semiconductors
Published: 8/1/2006
Authors: Javier Salcedo, Juin J Liou, Muhammad Yaqub Afridi, Allen R Hefner Jr
Abstract: An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyris ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31900

113. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Topic: Semiconductors
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

114. Government Jobs for Physicists: Believe It or Not Challenging and Satisfying!
Topic: Semiconductors
Published: 5/30/2006
Author: David G Seiler
Abstract: This presentation details the benefits of government positions for physicists based on the experiences of a NIST Division Chief.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32273

115. Nonlinear charge transport in semiconducting polythiophene
Topic: Semiconductors
Published: 5/23/2006
Author: Jan Obrzut
Abstract: We measured the complex impedance and nonlinear conductivity for regioregular poly(3-hexylthiophene) (P3HT) by recording and analyzing AC waveforms at their fundamental frequency and at higher order harmonic frequencies. We used 50 µm thick films of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854043

116. Facilitating the Culture of Mammalian Nerve Cells with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 5/19/2006
Authors: Samuel P Forry, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32339

117. RM 8111: Development of a Prototype Linewidth Standard
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 5/1/2006
Authors: Michael W Cresswell, William Gutherie, R. Dixon, Richard A Allen, Christine E. Murabito, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32585

118. Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference
Topic: Semiconductors
Published: 4/1/2006
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Richard A Allen, Michael W Cresswell
Abstract: A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32169

119. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009

120. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32176



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