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Topic Area: Semiconductors
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Displaying records 101 to 110 of 147 records.
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101. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun W. Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...

102. Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 7/1/2007
Author: Herbert S Bennett
Abstract: Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort in ...

103. I-NEMI 2007 Organic and Printed Electronics Roadmap
Topic: Semiconductors
Published: 4/2/2007
Authors: Jan Obrzut, Regis J Kline, Eric K Lin, David J Gundlach, Daniel Gamota
Abstract: This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such ...

104. Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms
Topic: Semiconductors
Published: 3/22/2007
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, A. J Smith, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Michael W Cresswell, Richard A Allen
Abstract: Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive metho ...

105. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...

106. Will Future Measurement Needs for the Semiconductor Industry Be Met?
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 1/1/2007
Authors: Herbert S Bennett, Alain C. Diebold, C. Michael Garner
Abstract: We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor i ...

107. Cellular Immobilization within Microfluidic Microenvironments: Dielectophoresis with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 10/25/2006
Authors: Samuel P. Forrey, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio

108. Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications
Topic: Semiconductors
Published: 10/23/2006
Authors: Bin Zhao, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Abstract: Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and t ...

109. Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics
Topic: Semiconductors
Published: 10/15/2006
Authors: Hao Xiong, John S Suehle
Abstract: Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and ...

110. RF, Analog and Mixed Signal Technologies for Communication ICs - an ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: W M. Huang, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao

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