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Topic Area: Semiconductors
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Displaying records 101 to 110 of 144 records.
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101. Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms
Topic: Semiconductors
Published: 3/22/2007
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, A. J Smith, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Michael W Cresswell, Richard A Allen
Abstract: Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive metho ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32582

102. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32607

103. Will Future Measurement Needs for the Semiconductor Industry Be Met?
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 1/1/2007
Authors: Herbert S Bennett, Alain C. Diebold, C. Michael Garner
Abstract: We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32296

104. Cellular Immobilization within Microfluidic Microenvironments: Dielectophoresis with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 10/25/2006
Authors: Samuel P. Forrey, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32513

105. Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications
Topic: Semiconductors
Published: 10/23/2006
Authors: Bin Zhao, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Abstract: Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32445

106. Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics
Topic: Semiconductors
Published: 10/15/2006
Authors: Hao Xiong, John S Suehle
Abstract: Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32515

107. RF, Analog and Mixed Signal Technologies for Communication ICs - an ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: W M. Huang, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32241

108. RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: Margaret Huang, Herbert S Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
Abstract: The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32426

109. On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)
Topic: Semiconductors
Published: 8/1/2006
Authors: Javier Salcedo, Juin J Liou, Muhammad Yaqub Afridi, Allen R Hefner Jr
Abstract: An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyris ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31900

110. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Topic: Semiconductors
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516



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