NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductors
Sorted by: date

Displaying records 101 to 110 of 152 records.
Resort by: Date / Title

101. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Topic: Semiconductors
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...

102. Green Fluorescent Protein in Inertially Injected Aqueous Nanodroplets
Topic: Semiconductors
Published: 1/30/2008
Authors: Jianyong Tang, Ana Jofre, Geoffrey Lowman, Rani Kishore, Joseph E. (Joseph E.) Reiner, Kristian Helmerson, Lori S. Goldner, M E. Greene
Abstract: We inertially inject and study the contents of optically trappable aqueous nanodroplets (hydrosomes) emulsified in a perfluorinated matrix. A new piezoelectric actuated device for production of single hydrosomes on demand is introduced. Hydrosomes co ...

103. Planning Report 07-2: Economic Impact of Measurement in the Semiconductor Industry
Series: OTHER
Report Number: 07-2
Topic: Semiconductors
Published: 12/31/2007
Author: Gregory C. Tassey
Abstract: The semiconductor industry has long been a driving force behind major advances in computing and electronics. Advances in the speed of processing power have enabled individuals and companies to create, access, and analyze data rapidly, improving ind ...

104. Non Uniform Structural Degradation in Porous Organosilicate Films Exposed to Plasma, Etching and Ashing as Characterized by X-Ray Porosimetry
Topic: Semiconductors
Published: 10/25/2007
Authors: Hae-Jeong Lee, Christopher L Soles, Eric K Lin, Wen-Li Wu, Yiping Liu
Abstract: The microelectronics industry critically needs non-destructive methodologies capable of profiling the porosity characteristics as a function of depth in the highly porous film that are used as interlayer dielectric insulators in integrated semiconduc ...

105. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun W. Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...

106. Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 7/1/2007
Author: Herbert S Bennett
Abstract: Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort in ...

107. I-NEMI 2007 Organic and Printed Electronics Roadmap
Topic: Semiconductors
Published: 4/2/2007
Authors: Jan Obrzut, Regis J Kline, Eric K Lin, David J Gundlach, Daniel Gamota
Abstract: This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such ...

108. Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms
Topic: Semiconductors
Published: 3/22/2007
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, A. J Smith, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Michael W Cresswell, Richard A Allen
Abstract: Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive metho ...

109. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...

110. Will Future Measurement Needs for the Semiconductor Industry Be Met?
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 1/1/2007
Authors: Herbert S Bennett, Alain C. Diebold, C. Michael Garner
Abstract: We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor i ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series