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Topic Area: Semiconductors

Displaying records 81 to 90 of 135 records.
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81. Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.
Topic: Semiconductors
Published: 3/6/2008
Authors: Nhan V Nguyen, Hao Xiong, John S Suehle, Oleg A Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Abstract: Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32733

82. High Sensitivity Attenuated Total Reflection Fourier Transform Infrared Spectroscopy Study of Ultrathin ZrO2 Films: A Study of Phase Change
Topic: Semiconductors
Published: 3/3/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32977

83. Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules
Topic: Semiconductors
Published: 3/3/2008
Author: Allen R Hefner Jr
Abstract: Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32930

84. Modeling the Effect of Finite Size Gratings on Scatterometry Measurements
Topic: Semiconductors
Published: 2/25/2008
Authors: Elizabeth Kenyon, Michael W Cresswell, Heather J Patrick, Thomas Avery Germer
Abstract: The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam.  However, in practice, the grat-ings used in scatterometry are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32956

85. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Topic: Semiconductors
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32831

86. Green Fluorescent Protein in Inertially Injected Aqueous Nanodroplets
Topic: Semiconductors
Published: 1/30/2008
Authors: Jianyong Tang, Ana Jofre, Geoffrey Lowman, Rani Kishore, Joseph Earl Reiner, Kristian Helmerson, Lori S. Goldner, M E. Greene
Abstract: We inertially inject and study the contents of optically trappable aqueous nanodroplets (hydrosomes) emulsified in a perfluorinated matrix. A new piezoelectric actuated device for production of single hydrosomes on demand is introduced. Hydrosomes co ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33049

87. Planning Report 07-2: Economic Impact of Measurement in the Semiconductor Industry
Series: OTHER
Report Number: 07-2
Topic: Semiconductors
Published: 12/31/2007
Author: Gregory C Tassey
Abstract: The semiconductor industry has long been a driving force behind major advances in computing and electronics. Advances in the speed of processing power have enabled individuals and companies to create, access, and analyze data rapidly, improving ind ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912236

88. Non Uniform Structural Degradation in Porous Organosilicate Films Exposed to Plasma, Etching and Ashing as Characterized by X-Ray Porosimetry
Topic: Semiconductors
Published: 10/25/2007
Authors: Hae-Jeong Lee, Christopher L Soles, Eric K Lin, Wen-Li Wu, Yiping Liu
Abstract: The microelectronics industry critically needs non-destructive methodologies capable of profiling the porosity characteristics as a function of depth in the highly porous film that are used as interlayer dielectric insulators in integrated semiconduc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852742

89. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun Wook Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852642

90. Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 7/1/2007
Author: Herbert S Bennett
Abstract: Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32643