NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductors

Displaying records 81 to 90 of 150 records.
Resort by: Date / Title


81. The transient behavior of NBTI - A new prospective
Topic: Semiconductors
Published: 10/17/2008
Authors: Kin P Cheung, Jason P Campbell
Abstract: The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33052

82. Oxide Reliability of SiC MOS Devices
Topic: Semiconductors
Published: 10/12/2008
Authors: Liangchun Yu, Kin P Cheung, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900182

83. An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices
Topic: Semiconductors
Published: 9/1/2008
Authors: Yun Wang, Kin P Cheung, Y.J. Choi, Byoung Hun Lee
Abstract: Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32746

84. Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride
Topic: Semiconductors
Published: 9/1/2008
Authors: Lawrence H Robins, T Zheleva, M Derenge, D Ewing, P Shah, K Jones, U Lee
Abstract: We designed experiments to investigate the role of the dislocation density on the performance of Schottky diodes fabricated on GaN material grown conventionally and by pendeo-epitaxy.  Devices of varying geometries were fabricated on the low def ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853617

85. Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants
Topic: Semiconductors
Published: 8/7/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902439

86. Negative-Bias Temperature Instability Induced Electron Trapping
Topic: Semiconductors
Published: 7/21/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33034

87. Advanced Power Conditioning System Technologies for High-Megawatt Fuel Cell Power Plants
Topic: Semiconductors
Published: 7/1/2008
Author: Allen R Hefner Jr
Abstract: High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE Inte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32843

88. Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Topic: Semiconductors
Published: 6/17/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and el ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32983

89. Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy
Topic: Semiconductors
Published: 5/27/2008
Authors: Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr
Abstract: Photoreflectance spectra obtained from epitaxial films of semiconducting {Beta}-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33076

90. Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films
Topic: Semiconductors
Published: 5/16/2008
Authors: Peter K. Schenck, Jennifer L Klamo, Nabil Bassim, Peter G. Burke, Yvonne Beatrice Gerbig, Martin L Green
Abstract: HfO2-TiO2-Y2O3 is an interesting high-k dielectric system.  Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties.  A library film of this syst ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853610



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series