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Topic Area: Semiconductors

Displaying records 91 to 100 of 151 records.
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91. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Topic: Semiconductors
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...

92. Investigation of Electron Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers
Topic: Semiconductors
Published: 5/8/2008
Authors: Yi Chen, Ning Zhang, M Dudley, JOSHUA CALDWELL, Kendrick Liu, ROBERT STAHLBUSH, XIANRONG HUANG, A T Macrander, David R Black
Abstract: Electron hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by ...

93. Electronic Wiring of a Multi-Redox Site Membrane Protein in a Biomimetic Surface Architecture
Topic: Semiconductors
Published: 5/5/2008
Authors: Marcel G Friedrich, Joseph William Robertson, Dieter Walz, Wolfgang Knoll, Renate L Naumann
Abstract: Electronic coupling of proteins to electrodes is an active field of research. Electronic coupling of membrane proteins remains difficult because the proteins require a bilayer lipid membrane to stay functionally intact. A biomimetic membrane system i ...

Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...

95. Demonstration of Molecular Assembly on Silicon (100) for CMOS-Compatible Molecule-Based Electronic Devices
Topic: Semiconductors
Published: 3/7/2008
Authors: Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Lee J Richter, Curt A Richter
Abstract: In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the CMOS-compatible silicon (100) orientation for use in closed, planar, molecular electronic devices. We develop processes for m ...

96. Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.
Topic: Semiconductors
Published: 3/6/2008
Authors: Nhan V Nguyen, Hao Xiong, John S Suehle, Oleg A Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Abstract: Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable m ...

97. High Sensitivity Attenuated Total Reflection Fourier Transform Infrared Spectroscopy Study of Ultrathin ZrO2 Films: A Study of Phase Change
Topic: Semiconductors
Published: 3/3/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein

98. Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules
Topic: Semiconductors
Published: 3/3/2008
Author: Allen R Hefner Jr
Abstract: Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, ...

99. Modeling the Effect of Finite Size Gratings on Scatterometry Measurements
Topic: Semiconductors
Published: 2/25/2008
Authors: Elizabeth Kenyon, Michael W Cresswell, Heather J Patrick, Thomas Avery Germer
Abstract: The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam.  However, in practice, the grat-ings used in scatterometry are ...

100. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Topic: Semiconductors
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...

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