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Topic Area: Optoelectronics
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Displaying records 51 to 60 of 63 records.
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51. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Optoelectronics
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33133

52. Superconducting transition-edge sensors optimized for high-efficiency photon-number resolving detectors
Topic: Optoelectronics
Published: Date unknown
Authors: Adriana Eleni Lita, Brice Robert Calkins, Lenson Pellouchoud, Aaron J Miller, Sae Woo Nam
Abstract: Superconducting photon detectors have emerged as a powerful new option for detecting single photons. System detection efficiency that incorporates the quantum efficiency of the device and system losses is one of the most important single-photon detec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905330

53. Synchronization monitoring of I/Q data and pulse carving misalignment for a serial-type 80-Gb/s RZ-DQPSK transmitter through optical/RF clock tone measurement
Topic: Optoelectronics
Published: 8/4/2008
Authors: Jeffrey A Jargon, Xiaoxia Wu, Louis Christen, Scott Nuccio, Omer F. Yilmaz, Loukas Paraschis, Yannick K. Lize, Alan Willner
Abstract: We experimentally demonstrate a monitoring technique for determining misalignment between the in-phase/ quadrature (I/Q) data streams and between the data and pulse carving in an 80 Gb/s serial-type return-to-zero differential quadrature phase-shift- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33136

54. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Optoelectronics
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539

55. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Optoelectronics
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

56. The Next Generation of Laser Radiometry at NIST
Topic: Optoelectronics
Published: 2/27/2006
Authors: John H Lehman, Christopher L Cromer, Marla L Dowell
Abstract: High accuracy laser radiometry is on the verge of significant improvements just as new laser technologies are evolving. Our present tasks are directed toward anticipating and meeting the measurement needs in two areas; higher power and shorter wavele ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32135

57. The effect of growth orientation and diameter on the elasticity of GaN Nanowires - a combined insitu TEM and atomistic modeling investigation
Topic: Optoelectronics
Published: 12/20/2010
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906878

58. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Optoelectronics
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911884

59. Traceable waveform calibration with a covariance-based uncertainty analysis
Topic: Optoelectronics
Published: 10/1/2009
Authors: Paul D Hale, Dylan F Williams, Andrew M Dienstfrey, Arkadiusz C. (Arkadiusz) Lewandowski, Tracy S. Clement, Darryl A. Keenan
Abstract: We describe a method for calibrating the voltage that a step-like pulse generator produces at a load at every time point in themeasured waveform. The calibration includes an equivalent-circuit model of the generator that can be used to determine how ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33129

60. Transfer function analysis of measured transfer matrices
Topic: Optoelectronics
Published: 8/1/1989
Authors: Shao Yang, Igor Vayshenker, A. R. Mickelson
Abstract: Measurements of mode transfer matrices of various multimode fiber optic connectors are presented. To analyze the accuracy and repeatability of such measurements, a theoretical framework which employs mode transmission functions is derived. It is sho ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912635



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