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Displaying records 11 to 15.
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11. Metrology Needs for TSV Fabrication
Topic: Microelectronics
Published: 3/4/2014
Authors: Victor Vartanian, Richard A Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
Abstract: This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914497

12. Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction
Topic: Microelectronics
Published: 7/1/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915348

13. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

14. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Topic: Microelectronics
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913332

15. X-Ray Micro-Beam Diffraction Measurement of the Effect of Thermal Cycling on Stress in Cu TSV: A Comparative Study
Topic: Microelectronics
Published: 5/26/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this study, we examined the impact of thermal cycling on the evolution of stresses in Cu TSVs us ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915644



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