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Topic Area: Microelectronics
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Displaying records 11 to 20 of 41 records.
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11. Checks of Amplifier Noise-Parameter Measurements
Topic: Microelectronics
Published: 6/11/2004
Authors: James Paul Randa, David K Walker
Abstract: We propose two verification methods for measurements of noise parameters of amplifiers, particularly low-noise amplifiers (LNAs). One method is a direct measurement of the parameter Trev, the noise temperature from the amplifier input, and the compar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31669

12. Defect and Microstructural Evolution in Thermally Cycled Cu Through-Silicon Vias
Topic: Microelectronics
Published: 6/14/2014
Authors: Chukwudi Azubuike Okoro, James Marro, Yaw S Obeng, Kathleen Richardson
Abstract: In this study, the effect of thermal cycling on defect generation, microstructure, and the RF signal integrity of blind Cu through-silicon via (TSV) were investigated. Three different thermal cycling profiles were used; each differentiated by their ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915535

13. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Microelectronics
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914474

14. Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays
Topic: Microelectronics
Published: 11/8/2013
Authors: Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin R Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
Abstract: A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914569

15. Efficient Greens Function Modeling of Line and Surface Defects in Multilayered Anisotropic Elastic and Piezoelectric Material
Topic: Microelectronics
Published: 10/2/2006
Authors: B. Yang, Vinod K Tewary
Abstract: Greens function (GF) modeling defects may take effect only if the GF as well as its various integrals over a line, a surface and/or a small volume can be efficiently evaluated. The GF itself is needed in modeling a point defect while the integrals ne ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851356

16. Flip Chip Lamination to electrically contact organic single crystals on flexible substrates
Topic: Microelectronics
Published: 4/20/2011
Authors: Oana Jurchescu, Brad Conrad, Christina Ann Hacker, David J Gundlach, Curt A Richter
Abstract: The fabrication of top metal contacts for organic electronics represents a challenge and has important consequences for electrical properties of such systems. We report a low cost and non-destructive printing process, Flip Chip Lamination (FCL), to f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907524

17. INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH
Topic: Microelectronics
Published: 12/1/2005
Authors: James Paul Randa, Susan L. Sweeney, Tom McKay, David K Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
Abstract: We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 {mu}m gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32120

18. In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition
Topic: Microelectronics
Published: 10/14/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909194

19. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Microelectronics
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908672

20. Metrology Needs for TSV Fabrication
Topic: Microelectronics
Published: 3/4/2014
Authors: Victor Vartanian, Richard A Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
Abstract: This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914497



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