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11. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Microelectronics
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...

12. Influence of the central mode and soft phonon on the microwave dielectric loss near the strain-induced ferroelectric phase transitions in Sr^dn+1^uTi^dn^uO^d3n+1^u*
Topic: Microelectronics
Published: 11/12/2014
Authors: V. Goian, S. Kamba, D Nuzhnyy, Nathan Orloff, T. Birol, C.-H Lee, D. G. Schlom, James C Booth
Abstract: Recently, Lee et al.^u[1]^dused~1% tensile strain to induce a ferroelectic instability in thin films of Sr^dn+1^uTi^dn^uO^d3n+1^u (n=1-6) phases. They showed that the Curie temperature T^dc^u gradually increased with n, reaching 180 K for Sr7Ti6O19 ...

13. Metrology Needs for TSV Fabrication
Topic: Microelectronics
Published: 3/4/2014
Authors: Victor Vartanian, Richard A Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
Abstract: This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a f ...

14. Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction
Topic: Microelectronics
Published: 7/1/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; on ...

15. Organic Electronics: Challenges and Opportunities
Topic: Microelectronics
Published: 3/31/2010
Author: Calvin Chan

16. Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis
Topic: Microelectronics
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Yaw S Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
Abstract: In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrit ...

17. X-Ray Micro-Beam Diffraction Measurement of the Effect of Thermal Cycling on Stress in Cu TSV: A Comparative Study
Topic: Microelectronics
Published: 5/26/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this study, we examined the impact of thermal cycling on the evolution of stresses in Cu TSVs us ...

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