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Displaying records 11 to 20 of 54 records.
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11. Comparison of Methods for Adapter Characterization
Topic: Electromagnetics
Published: 6/1/1999
Authors: James Paul Randa, Wojciech Wiatr, Robert L. Billinger

12. Design and Testing of NFRad - A New Noise Measurement System
Series: Technical Note (NIST TN)
Report Number: 1518
Topic: Electromagnetics
Published: 3/1/2000
Authors: Chriss A. Grosvenor, James Paul Randa, Robert L. Billinger
Abstract: The NIST Noise project has constructed and tested a new, automated, coaxial (GPC-7) radiometer for the measurement of noise sources in the 8-12 GHz frequency band. It is an isolated, total-power radiometer that relies on lookup tables for relevant re ...

13. Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields
Topic: Electromagnetics
Published: 7/23/2014
Authors: Nathan D Orloff, Jan Obrzut, Christian John Long, Thomas F. Lam, James C Booth, David R Novotny, James Alexander Liddle, Pavel Kabos
Abstract: The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. ...

14. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Electromagnetics
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...

15. Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz
Topic: Electromagnetics
Published: 7/1/2011
Authors: Thomas M Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul Timothy Blanchard, Norman A Sanford, Kristine A Bertness, Christpher Smith
Abstract: The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after expo ...

16. Estimating Uncertainties in Antenna Measurements
Topic: Electromagnetics
Published: 4/8/2013
Author: Michael H Francis
Abstract: We describe general methods of estimating uncertainties in antenna measurements. These include estimates based on theory (analysis1), simulation, and altering the measurement system (self-coparison tests). The important component sources of uncertain ...

17. Evaluation of a Robotically Controlled Millimeter-Wave Near-Field Pattern Range at NIST Determining mechaincal suitability for antenna measurements
Topic: Electromagnetics
Published: 4/8/2013
Authors: David R Novotny, Joshua A Gordon, Jason B Coder, Michael H Francis, Jeffrey R Guerrieri
Abstract: The Antenna Metrology Laboratory at the National Institute of Standards and Technology, USA (NIST) is developing a robotically controlled near-field pattern range for measuring antennas and components from 50 GHz to 500 GHz. This new range is intende ...

18. Experimental Bounds on Classical Random Field Theories
Topic: Electromagnetics
Published: 12/10/2014
Authors: Joffrey Kent Peters, Sergey V Polyakov, Jingyun Fan, Alan L Migdall
Abstract: Alternative theories to quantum mechanics motivate important fundamental tests of our understanding and description of the smallest physical systems. Here we place experimental limits on those classical field theories which result in power-depend ...

19. High-Frequency Dielectric Measurements: A Tutorial
Topic: Electromagnetics
Published: 4/1/2010
Authors: James R. Baker-Jarvis, Michael D Janezic, Donald C. DeGroot
Abstract: KNOWLEDGE of the response of materials to electromagnetic (EM) fields in the frequency range of radio frequency (RF) through terahertz (THz) is critical to numerous research projects and electronic product development activities. Electromagnetic wave ...

Topic: Electromagnetics
Published: 12/1/2005
Authors: James Paul Randa, Susan L. Sweeney, Tom McKay, David K Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
Abstract: We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 {mu}m gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and t ...

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