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Topic Area: Advanced Materials
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Displaying records 21 to 30 of 33 records.
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21. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Advanced Materials
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

22. Kinetic Inductance Contributions to the Nonlinear Response of Superconductors at Microwave Frequencies
Topic: Advanced Materials
Published: 7/11/2003
Authors: James C Booth, Kenneth Leong, Susan Schima
Abstract: We demonstrate how nonlinear effects in high temperature superconducting thin films can be quantified based on a current-dependent penetration depth {lambda}(J). Using an assumed form for {lambda}(J), we calculate the expected third-order harmonic si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31363

23. Measurement of orbital asymmetry and strain in Co^d90^Fe^d10^/Ni multilayers and alloys: Origins of perpendicular anisotropy
Topic: Advanced Materials
Published: 2/13/2013
Authors: Justin M Shaw, Hans T. Nembach, Thomas J Silva
Abstract: We use broadband ferromagnetic resonance spectroscopy and x-ray diffraction to investigate the fundamental origin of perpendicular anisotropy in Co^d90^Fe^d10^/Ni multilayers. By careful evaluation of the spectroscopic {I}g{/I}-factor, we determine ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913103

24. Methods of characterization of broadband dielectric properties, challenges in device fabrication and measurement
Topic: Advanced Materials
Published: 6/1/2010
Authors: James C Booth, Nathan Daniel Orloff
Abstract: We present a new experimental method for determining the broadband dielectric permittivity of ferroelectric thin film samples over the broad frequency range 100 Hz - 40 GHz. Such characterization is extremely important for both a fundamental unders ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33022

25. Metrology in the Nanoelectronics Era: Collaborative Innovation Between NIST and Industry
Topic: Advanced Materials
Published: 11/1/2006
Authors: David G Seiler, John S Suehle
Abstract: This special article in Semiconductor International discusses NIST's role in metrology for the semiconductor industry as it moves to the nanoscale regime.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32487

26. Microstructural Evolution of Pd-doped Nanoscale Zero-valent Iron (nZVI) Particles in Aqueous Media and Implications for Particle Reactivity
Topic: Advanced Materials
Published: 5/6/2010
Authors: Andrew A Herzing, Weile Yan, Christopher J. Kiely, Wei-xian Zhang
Abstract: Palladized zero-valent iron nanoparticles have been frequently employed to achieve enhanced treatment of halogenated organic compounds. However no detailed study has been published on their structures, especially the distribution of palladium within ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904152

27. Microwave Surface Impedance and Nonlinear Properties of MgB^d2^ Films
Topic: Advanced Materials
Published: 6/1/2003
Authors: James C Booth, Sang Yo Lee, Kenneth Leong, J. H. Lee, J. Lim, H. N. Lee, S. H. Moon, B. Oh
Abstract: We have measured the temperature dependence of the microwave surface impedance and the nonlinear response of high-quality MgB^d2^ films on c-cut sapphire at temperatures below 40 K. MgB^d2^ films with surface resistance (Rs) as low as 0.09 m{Ohm} at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30582

28. Multiwalled carbon nanotubes coated with silicon carbonitride (SiCN)
Topic: Advanced Materials
Published: 4/1/2010
Authors: Katie Hurst, Christopher L Cromer, Elisabeth Mansfield, Roop Mahajan, John H Lehman, Gurpreet Singh
Abstract: We describe the development of two next-generation optical coatings; amorphous polymer-derived silicon carbonitride (SiCN) particles and a composite consisting of SiCN surrounding a multiwalled carbon nanotube (MWCNT) core. Laser-induced damage testi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904161

29. New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Topic: Advanced Materials
Published: 9/1/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32968

30. Organic Electronics: Challenges and Opportunities
Topic: Advanced Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389



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