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Topic Area: Advanced Materials
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Displaying records 11 to 20 of 31 records.
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11. Challenges and Opportunities of Organic Electronics
Topic: Advanced Materials
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

12. Multiwalled carbon nanotubes coated with silicon carbonitride (SiCN)
Topic: Advanced Materials
Published: 4/1/2010
Authors: Katie Hurst, Christopher L Cromer, Elisabeth Mansfield, Roop Mahajan, John H Lehman, Gurpreet Singh
Abstract: We describe the development of two next-generation optical coatings; amorphous polymer-derived silicon carbonitride (SiCN) particles and a composite consisting of SiCN surrounding a multiwalled carbon nanotube (MWCNT) core. Laser-induced damage testi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904161

13. Organic Electronics: Challenges and Opportunities
Topic: Advanced Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

14. High performance airbrushed organic thin film transistors
Topic: Advanced Materials
Published: 3/30/2010
Authors: Calvin Chan, Lee J Richter, Brad Anthony Dinardo, Cherno Jaye, Brad Conrad, Hyun W. Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904576

15. Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Advanced Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun W. Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905344

16. Demonstration of Impedance Matching Using a mu-Negative (MNG) Metamaterial
Topic: Advanced Materials
Published: 4/14/2009
Authors: Christopher L Holloway, R. B Greegor, C. G Parazzoli, J. A Nielsen, M. H Tanielian, D Vier, S Schultz, Richard Ziolkowski
Abstract: A mu-negative (MNG) metamaterial hemisphere was used to demonstrate impedance matching for a magnetic loop. The metamaterial was comprised of copper spirals deposited on an alumina substrate. The spirals, hemisphere, and magnetic loop were designed ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32963

17. Black optical coating for high-power laser measurements from carbon nanotubes and silicate
Topic: Advanced Materials
Published: 1/15/2009
Authors: Christopher L Cromer, Katie Hurst, Xiaoyu X. Li, John H Lehman
Abstract: We describe a coating based on potassium silicate, commonly known as water glass, and multiwall carbon nanotubes. The coating has a high absorbance (0.96 at 1064 nm in wavelength) and a laser damage threshold that is comparable to that of ceramic coa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33195

18. Purification of as-prepared single-walled carbon nanotubes by pulsed excimer-laser treatment
Topic: Advanced Materials
Published: 9/25/2008
Authors: Katie Hurst, Anne Dillon, Shao Yang, John H Lehman
Abstract: We investigate the purification of as-prepared single wall carbon nanotubes (SWCNTs) by exposure to pulsed 193 and 248 nm laser light, as well as lamp wavelengths of 254 and 185 nm. Raman spectroscopy before and after laser exposure indicates the rem ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32995

19. New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Topic: Advanced Materials
Published: 9/1/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32968

20. Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
Topic: Advanced Materials
Published: 8/27/2008
Authors: Nhan V Nguyen, Oleg A Kirillov, Weirong Jiang, Wenyong Wang, John S Suehle, P. D Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
Abstract: In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry.  The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, whi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32993



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