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Topic Area: Advanced Materials
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Displaying records 11 to 20 of 27 records.
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11.
Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Advanced Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun Wook Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905344
12.
Demonstration of Impedance Matching Using a mu-Negative (MNG) Metamaterial
Topic: Advanced Materials
Published: 4/14/2009
Authors: Christopher L Holloway, R. B Greegor, C. G Parazzoli, J. A Nielsen, M. H Tanielian, D Vier, S Schultz, Richard Ziolkowski
Abstract: A mu-negative (MNG) metamaterial hemisphere was used to demonstrate impedance matching for a magnetic loop. The metamaterial was comprised of copper spirals deposited on an alumina substrate. The spirals, hemisphere, and magnetic loop were designed
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32963
13.
Black optical coating for high-power laser measurements from carbon nanotubes and silicate
Topic: Advanced Materials
Published: 1/15/2009
Authors: Christopher L Cromer, Katie Hurst, Xiaoyu X. Li, John H Lehman
Abstract: We describe a coating based on potassium silicate, commonly known as water glass, and multiwall carbon nanotubes. The coating has a high absorbance (0.96 at 1064 nm in wavelength) and a laser damage threshold that is comparable to that of ceramic coa
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33195
14.
Purification of as-prepared single-walled carbon nanotubes by pulsed excimer-laser treatment
Topic: Advanced Materials
Published: 9/25/2008
Authors: Katie Hurst, Anne Dillon, Shao Yang, John H Lehman
Abstract: We investigate the purification of as-prepared single wall carbon nanotubes (SWCNTs) by exposure to pulsed 193 and 248 nm laser light, as well as lamp wavelengths of 254 and 185 nm. Raman spectroscopy before and after laser exposure indicates the rem
...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32995
15.
New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Topic: Advanced Materials
Published: 9/1/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32968
16.
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
Topic: Advanced Materials
Published: 8/27/2008
Authors: Nhan V Nguyen, Oleg A Kirillov, Weirong Jiang, Wenyong Wang, John S Suehle, P. D Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
Abstract: In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry. The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, whi
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32993
17.
Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure
Topic: Advanced Materials
Published: 5/23/2008
Author: Nhan V Nguyen
Abstract: Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties at solid-solid interfaces. Upon photon excitation, electrons or/and holes in the solid under an external electrical bias, accumulate at th
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32964
18.
Constraint Effect in Deformation of Copper Interconnect Lines Subjected to Cyclic Joule Heating
Topic: Advanced Materials
Published: 11/26/2007
Authors: David Thomas Read, Roy Howard Geiss, Nicholas Barbosa
Abstract: Using finite element analysis, we calculate the temperature range and the resulting cyclic Von Mises strain resulting from Joule heating, generated by the application of alternating current, applied to specimens representative of commercial copper da
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901599
19.
Metrology in the Nanoelectronics Era: Collaborative Innovation Between NIST and Industry
Topic: Advanced Materials
Published: 11/1/2006
Authors: David G Seiler, John S Suehle
Abstract: This special article in Semiconductor International discusses NIST's role in metrology for the semiconductor industry as it moves to the nanoscale regime.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32487
20.
A Superconducting Microwave Power Limiter for Protection of High-Performance Superconducting Electronics
Topic: Advanced Materials
Published: 7/11/2003
Authors: James C Booth, Kenneth Leong, Susan Schima
Abstract: We report on the development of a microwave power limiter based on high temperature superconductor technology. The power limiter takes the form of a 50 Ω coplanar waveguide transmission line that can be reversibly driven into the normal state as
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31362