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Topic Area: Semiconductors

Displaying records 1 to 10 of 135 records.
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1. Thermo-Mechanical Characterization of Au–In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductors
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

2. 2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Topic: Semiconductors
Published: 1/1/2013
Authors: Christina Ann Hacker, Alain C. Diebold
Abstract: During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912304

3. EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS
Topic: Semiconductors
Published: 11/7/2012
Authors: Richard A Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David Thomas Read, Andreas Fehk¿hrer, J¿rgen Burggraf
Abstract: An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912462

4. Physical Model for Random Telegraph Noise Amplitudes and Implications
Topic: Semiconductors
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

5. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910916

6. ITRS Chapter: RF and A/MS Technologies
Topic: Semiconductors
Published: 1/12/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: Radio frequency and analog/mixed-signal (RF and A/MS) technologies are essential and critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wire-line communications mark ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909850

7. MEMS
Topic: Semiconductors
Published: 1/12/2012
Author: Michael Gaitan
Abstract: Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910072

8. Frontiers of Characterization and Metrology for Nanoelectronics: 2011
Topic: Semiconductors
Published: 12/28/2011
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910545

9. More than Moore or More Moore: a SWOT analysis
Topic: Semiconductors
Published: 12/28/2011
Authors: Herbert S Bennett, G. Dan Hutcheson
Abstract: Over the last decade, the world of semiconductors has broadened its horizon from More Moore and beyond conventional scaling to More than Moore. Some first hypothesized the end of Moore’s law and the beginning of a new era. They saw it as an OR gate w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909225

10. Impact of Electrolyte Deposition Technique on Resistive Pt/Ta2O5/Cu Switch Performance
Topic: Semiconductors
Published: 12/7/2011
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Mohinee Verma, Yuhong Kang, Helmut Baumgart, Marius Orlowski
Abstract:
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910527