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You searched on: Author: Paul Amirtharaj

Displaying records 1 to 10 of 25 records.
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1. Optical Properties of Semiconductors
Published: 10/19/2009
Authors: David G Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Abstract: Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and at ...

2. High-accuracy Midinfrared(450 cm-1 ' w ' 4000 cm-1)Refractive Index values of Silicon
Published: 6/15/2005
Authors: Deane Chandler-Horowitz, Paul M. Amirtharaj
Abstract: The real and imaginary parts of the refractive index, n(w) and k(w), of silicon, as a function of photon frequency w were measured by using Fourier Transform Infrared (FTIR) transmission spectral data from a double-sided-polished Si wafer. An accurat ...

3. Molecular Beam Epitaxial Growth and Characterization of Cd-Based II-VI Wide-Bandgap Compounds on Si Substrates
Published: 1/3/2005
Authors: G Brill, Y Chen, Paul M. Amirtharaj, W Sarney, N. K. Dhar, Deane Chandler-Horowitz

4. Composite Substrate Research for Large-format HgCdTe IRFPAs
Published: 4/1/2003
Authors: N. K. Dhar, Y Chen, P M. Brill, Paul M. Amirtharaj, S Velicu, P Boieriu, Anthony Birdwell
Abstract: Research on silicon based composite substrates is being conducted at the Army Research Laboratory. These substrates can be used to deposit HgCdTe alloys to fabricate large-format infrared photodetector arrays. Traditionally, composite structures are ...

5. AlGaAs Composition Measurements from In Situ Optical Reflectance
Published: 7/1/2000
Authors: Kristine A Bertness, J T. Armstrong, Ryna Beth Marinenko, Lawrence H Robins, Albert J. Paul, Joseph G. Pellegrino, Paul M. Amirtharaj, Deane Chandler-Horowitz
Abstract: We measure the composition of AlGaAs layers during epitaxial crystal growth using in situ normal-incidence optical reflectance supported by independent methods of measuring growth rate. The results are compared with conventional ex situ characterizat ...

6. Photoluminescence Quenching in Si1-xGex/Si Multiple Quantum Wells Grown with Atomic Hydrogen
Published: 3/1/1999
Authors: Greg Balchin, Paul M. Amirtharaj, C. Silvestre, P Thompson

7. Photoluminescence Quenching in Si^d1-x^Ge^dx^/Si Multiple Quantum Wells Grown With Atomic Hydrogen
Published: 3/1/1999
Authors: Greg Balchin, Paul M. Amirtharaj, C Silvestre, P E Thompson
Abstract: We compare the photoluminescence spectra from a series of Si^d1-x^Ge^dx^/Si (0.1 {< or =} {< or =} 0.3) multiple quantum well (MQW) samples grown with atomic hydrogen to a series of similar samples grown without atomic hydrogen. All of the samples ...

8. High-Resolution, High-Accuracy, Mid-IR (450 cm^u-1^ {less than or equal to} {omega} {less than or equal to} 4000 cm^u-1^) Refractive Index Measurements in Silicon
Published: 3/1/1998
Authors: Deane Chandler-Horowitz, Paul M. Amirtharaj, John Richard Stoup
Abstract: The real and imaginary part of the refractive index of silicon, n({omega}) and k({omega}), have been measured by using Fourier Transform Infrared (FTIR) transmission spectral data from a double-sided-polished IC grade Si wafer. An accurate independe ...

9. Optical Properties of Mercury Cadmium Telluride
Published: 12/31/1997
Authors: Paul M. Amirtharaj, John H. Burnett

10. Study of Phonons in Semiconductor Superlattices by Raman Scattering Spectroscopy and Microscopic Model Calculation
Published: 12/31/1997
Authors: D. N. Talwar, B. Roughani, Joseph G. Pellegrino, Paul M. Amirtharaj, S. B. Qadri

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