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You searched on: Author: Nhan Nguyen

Displaying records 1 to 10 of 78 records.
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1. An apparatus for spatially resolved, temperature dependent near infrared reflectance measurements for identifying thermochromic transitions in combinatorial thin film libraries
Published: 11/18/2015
Authors: Sara Cordero Barron, Nam Thanh Nguyen, Nhan V Nguyen, Martin L Green, Mitul P. Patel
Abstract: A metrology and data analysis protocol is described for high throughput construction of thermochromic metal-insulator phase diagrams for lightly substituted VO2 thin films. The technique exploits the abrupt change in near infrared optical properties, ...

2. Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates
Published: 10/1/2015
Authors: Ratan Kumar Debnath, MD Rezaul Hasan, Ting Xie, Sara Cordero Barron, Guannan Liu, Nhan V Nguyen, Abhishek Motayed, M V Rao
Abstract: A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The fabricated devi ...

3. Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition metal oxides
Published: 4/21/2015
Authors: Ting Xie, Guannan Liu, Baomei Wen, Jong Yoon Ha, Nhan V Nguyen, Abhishek Motayed, Ratan Kumar Debnath
Abstract: Solution-processed p-n heterojunction photodiodes have been fabricated based on transition metal oxides in which NiO and ternary Zn1-xMgxO (x = 0 ‹ 0.1) have been employed as p-type and n-type semiconductors, respectively. Composition related str ...

4. Solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector
Published: 1/19/2015
Authors: Ratan Kumar Debnath, Ting Xie, Baomei Wen, Wei Li, Abhishek Motayed, Nhan V Nguyen
Abstract: This paper presents a high efficiency heterojunction p-NiO/n-ZnO thin film ultraviolent (UV) photodetector fabricated on conductive glass substrates. The devices are fabricated by using a simple spin-coating layer-by-layer method from precursor s ...

5. Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Published: 11/21/2014
Authors: Wei Li, Glen Birdwell, Matin Amani, Yi-Hsien Lee, Ling Xi, Xuelei Liang, Lianmao Peng, Curt A Richter, Kong Jing, David J Gundlach, Nhan V Nguyen

6. Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water
Published: 4/23/2014
Authors: Brent A Sperling, John Hoang, William Andrew Kimes, James E Maslar, Kristen L. Steffens, Nhan V Nguyen
Abstract: Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is ...

7. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, Wei Li, James I. Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...

8. Backcontact CdSe/CdTE Windowless Solar Cells
Published: 2/1/2013
Authors: Donguk Kim, Carlos M. Hangarter, Ratan Kumar Debnath, Jong Yoon Ha, Carlos R Beauchamp, Matthew David Widstrom, Jonathan E Guyer, Nhan V Nguyen, B. Y. Yoo, Daniel Josell
Abstract: This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned ...

9. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...

10. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...

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