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You searched on: Author: Nhan Nguyen

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1. Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Published: 11/21/2014
Authors: wei li, Glen Birdwell, Matin Amani, Yi-Hsien Lee, Ling Xi, Xuelei Liang, Lianmao Peng, Curt A Richter, Kong Jing, David J Gundlach, Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915849

2. Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water
Published: 4/23/2014
Authors: Brent A Sperling, John Hoang, William Andrew Kimes, James E Maslar, Kristen L. Steffens, Nhan V Nguyen
Abstract: Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915032

3. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, wei li, James I. Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

4. Backcontact CdSe/CdTE Windowless Solar Cells
Published: 2/1/2013
Authors: Donguk Kim, Carlos M. Hangarter, Ratan Kumar Debnath, Jong Yoon Ha, Carlos R Beauchamp, Matthew David Widstrom, Jonathan E Guyer, Nhan V Nguyen, B. Y. Yoo, Daniel Josell
Abstract: This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912050

5. Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry
Published: 1/9/2013
Authors: Kun Xu, Oleg A Kirillov, David J Gundlach, Nhan V Nguyen, Pei D Ye, Min Xu, Lin Dong, Hong Sio
Abstract: Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulatin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911342

6. Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Published: 7/11/2012
Authors: Rusen Yan, Qin Q. Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A Richter, Angela R Hight Walker, Xuelei X. Liang, David J Gundlach, Nhan V Nguyen, Huili Grace Xing, Alan Seabaugh
Abstract: We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3  10e11 cm-2 negative extrinsic charge present on the graphene surface. Als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911396

7. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

8. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

9. Investigation of SiO2/HfO2 stacks for flash memory applications
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

10. Photoemission Threshold Spectroscopy: MOS Band alignments
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441



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