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Author: vivek prabhu
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Displaying records 11 to 20 of 77 records.
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11.
Chemical Force Microscopy for Imaging Chemical Distributions in Undeveloped Resists
Published: Date unknown
Authors: John Taylor Woodward IV, Jeeseong Hwang, Bryan D. Vogt, Vivek M Prabhu, Eric K Lin, Kwang-Woo Choi, Harun Solak, Michael Leeson
Abstract: Controlling line width roughness (LWR) is a critical problem in the development of EUV resists. Contributing to the difficulty of reducing LWR is the limited knowledge of the nanoscale morphology of the resist film throughout the process. Generally
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841144
12.
Chemically Amplified Resist Fundamentals Studies by Combinatorial approaches
Published: 3/1/2003
Authors: M Wang, Vivek M Prabhu, Eric K Lin, Michael J Fasolka, Alamgir Karim
Abstract: Sub-100 nm lithography requires more understanding of photoresist material properties and processing conditions to achieve necessary critical dimension control of patterned structures. As resist thickness and feature linewidth decrease, fundamental
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852278
13.
Control of Moisture at Buried Polymer / Alumina Interfaces Through Subtrate Surface Modification
Published: 3/15/2005
Authors: B D. Vogt, Vivek M Prabhu, Christopher L Soles, Sushil K Satija, Eric K Lin, Wen-Li Wu
Abstract: Moisture absorption in poly(4-tert-butoxycarbonyl-oxystyrene) (PBOCSt) films supported on Al2O3 sputter coated silicon wafers is measured using neutron and x-ray reflectivity. Accumulation of water at the interface during moisture exposure results in
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852447
14.
Control of Moisture at Buried Polymer/Alumina Interfaces through Substrate Surface Modification
Published: 1/1/2005
Authors: B D. Vogt, Vivek M Prabhu, Christopher L Soles, Sushil K Satija, Eric K Lin, Wen-Li Wu
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853977
15.
Copolymer Fraction Effect on Acid Catalyzed Deprotection Reaction Kinetics in Model 193 nm Photoresists
Published: 2/19/2006
Authors: Shuhui Kang, Vivek M Prabhu, B D. Vogt, Eric K Lin, Wen-Li Wu, Karen Turnquest
Abstract: A correlation between polymer molecular structure and acid catalyzed kinetics is demonstrated by a binary copolymer photoresists system which includes an acid-liable and an acid-inert species. It was found that the acid catalyzed deprotection kinetic
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852598
16.
Correlation of the Reaction Front With Roughness in Chemically Amplified Photoresists
Published: 7/1/2004
Authors: Ronald Leland Jones, Vivek M Prabhu, D M Goldfarb, Eric K Lin, Christopher L Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, M Angelopoulos
Abstract: A model bilayer geometry is used to examine fundamental contributions of in-situ reaction front profile width on resulting line edge roughness after development in standard 0.26 N tetramethyl ammonium hydroxide aqueous base developer. The bilayer ge
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852147
17.
Counterion Associative Behavior with Flexible Polyelectrolytes
Published: 1/1/2004
Authors: Vivek M Prabhu, Eric J. Amis, D P Bossev, N S Rosov
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853951
18.
Counterion Structure and Dynamics in Polyelectrolyte Solutions
Published: 6/23/2005
Author: Vivek M Prabhu
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854018
19.
Counterion associative behavior with flexible polyelectrolytes
Published: 9/1/2004
Authors: Vivek M Prabhu, Eric J. Amis, N S Rosov
Abstract: At low ionic strength, organic counterions dress a flexible charged polymer as measured directly by small-angle neutron scattering (SANS) and neutron spin-echo (NSE) spectroscopy. This dressed state, quantified by the concentration dependence of th
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852243
20.
Deprotection Kinetics in 193 nm Photoresist Thin Films: Influence of Copolymer Content
Published: 7/25/2006
Authors: Shuhui Kang, Vivek M Prabhu, B D. Vogt, Eric K Lin, Wen-Li Wu, Karen Turnquest
Abstract: The reaction-diffusion mechanism of photoacids is dependent upon many variables including the reaction rate, size of the acid counterion species and temperature. Recent experiments have demonstrated the acid diffusion can be controlled by a combinat
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852550