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Author: vivek prabhu
Displaying records 21 to 30 of 77 records.
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21.
Manipulation of the asymmetric swelling fronts of photoresist polyelectrolyte gradient thin films
Published: 9/22/2008
Authors: Vivek M Prabhu, Ashwin Rao, Shuhui Kang, Eric K Lin, Sushil K. Satija
Abstract: The depth profile of swelling polyelectrolyte layers is characterized by a static substrate layer and an asymmetric profile with position and shape parameters that describe the near substrate and solution-side of the interfacial region. The character
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854125
22.
Structure and Properties of Small Molecule-Polymer Blend Semiconductors for Organic Thin Film Transistors
Published: 6/4/2008
Authors: Vivek M Prabhu, Jihoon Kang, Nayool Shin, Do Y. Yoon, Do Young Jang
Abstract: A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and poly(alpha-methylstyrene) (PaMS) was performed to understand and optimize the blend semic
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854087
23.
Characterization of the Latent Image to Developed Image in Model EUV Photoresists
Published: 2/22/2008
Authors: John Taylor Woodward IV, Kwang-Woo Choi, Vivek M Prabhu, Shuhui Kang, Kristopher Lavery, Wen-Li Wu, Michael Leeson, Anuja De Silva, Nelson Felix, Christopher K. Ober
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet exposure-dose sensitivity, line-width roughness, and resolution requirements. In order to quantify how trade-offs are related to the materials properties of the resist and proc
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853583
24.
The Effect of EUV Molecular Glass Architecture on the Bulk Dispersion of a Photo-Acid Generator
Published: 2/22/2008
Authors: David Lloyd VanderHart, Vivek M Prabhu, Anuja De Silva, Nelson Felix, Christopher K. Ober
Abstract: We have examined four molecular glasses (MGs) which are candidates for EUV photoresist formulations. These derivatized glasses and their unprotected precursors were investigated by both 1H and 13C solid state NMR in the bulk state as pure materials
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853578
25.
Characterization of the In-Plane Structure of Buried Interfaces by Off-Specular X-Ray and Neutron Reflectometry
Published: 2/14/2008
Authors: Kristopher Lavery, Vivek M Prabhu, Eric K Lin, Wen-Li Wu, Kwang-Woo Choi, Sushil K. Satija, M Wormington
Abstract: Off-specular reflectivity, or diffuse scattering, probes the lateral compositional variations at surfaces and interfaces. Of particular interest is the characterization at buried interfaces for the form and amplitude of roughness. Recent advances i
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852736
26.
Lateral Length Scales of Latent Image Roughness as Determined by Off-Specular Neutron Reflectivity
Published: 2/14/2008
Authors: Kristopher Lavery, Vivek M Prabhu, Eric K Lin, Wen-Li Wu, Sushil K. Satija, Kwang-Woo Choi, M Wormington
Abstract: A combination of specular and off-specular neutron reflectometry was used to measure the buried lateral roughness of the reaction-diffusion front in a model extreme ultraviolet lithography photoresist. Compositional heterogeneity at the latent react
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852777
27.
Direct measurement of the spatial extent of the in situ developed latent image by neutron reflectivity
Published: 12/11/2007
Authors: Vivek M Prabhu, B D. Vogt, Shuhui Kang, Eric K Lin, Sushil K. Satija
Abstract: The spatial distribution of polymer photoresist and deuterium labeled base developer highlights a
fraction of the line edge that swells but does not dissolve. This residual swelling fraction remains
swollen during both the in situ aqueous hydroxide
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852747
28.
Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist
Published: 2/25/2007
Authors: Kwang-Woo Choi, Vivek M Prabhu, Kristopher Lavery, Eric K Lin, Wen-Li Wu, John Taylor Woodward IV, Michael Leeson, H Cao, Manish Chandhok, George Thompson
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and pr
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852725
29.
Evaluation of the 3D Compositional Fluctuation Effect on Line-Edge-Roughness
Published: 2/25/2007
Authors: Shuhui Kang, Wen-Li Wu, B D. Vogt, Vivek M Prabhu, Eric K Lin, Karen Turnquest
Abstract: Line-edge-roughness (LER) and the relationship to resist processing and materials design is a critical problem for sub-65 nm photolithography. In this work we investigate how chemical composition fluctuations (heterogeneity) produced by the reaction
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852724
30.
FTIR measurements of compositional heterogeneities
Published: 2/25/2007
Authors: Shuhui Kang, B D. Vogt, Wen-Li Wu, Vivek M Prabhu, David Lloyd VanderHart, Ashwin Rao, Eric K Lin, Karen Turnquest
Abstract: A general approach to characterize compositional heterogeneity in polymer thin films using Fourier transform infrared (FTIR) spectroscopy has been demonstrated Polymer films with varying degrees of heterogeneity were prepared using a model chemically
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852722