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Author: vivek prabhu

Displaying records 21 to 30 of 78 records.
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21. Characterization of the Photoacid Diffusion Length
Published: 2/27/2009
Authors: Shuhui Kang, Vivek M Prabhu, Wen-Li Wu, Eric K Lin, Kwang-Woo Choi, Manish Chandhok, Todd Younkin, Wang Yueh
Abstract: The photoacid diffusion length is a critical issue for EUV photoresists and photolithography because it governs critical dimension (CD), line-edge-roughness (LER) and line-width-roughness (LWR). This paper provides an approach to characterize the pho ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902190

22. Manipulation of the asymmetric swelling fronts of photoresist polyelectrolyte gradient thin films
Published: 9/22/2008
Authors: Vivek M Prabhu, Ashwin Rao, Shuhui Kang, Eric K Lin, Sushil K. Satija
Abstract: The depth profile of swelling polyelectrolyte layers is characterized by a static substrate layer and an asymmetric profile with position and shape parameters that describe the near substrate and solution-side of the interfacial region. The character ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854125

23. Structure and Properties of Small Molecule-Polymer Blend Semiconductors for Organic Thin Film Transistors
Published: 6/4/2008
Authors: Vivek M Prabhu, Jihoon Kang, Nayool Shin, Do Y. Yoon, Do Young Jang
Abstract: A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and poly(alpha-methylstyrene) (PaMS) was performed to understand and optimize the blend semic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854087

24. Characterization of the Latent Image to Developed Image in Model EUV Photoresists
Published: 2/22/2008
Authors: John Taylor Woodward IV, Kwang-Woo Choi, Vivek M Prabhu, Shuhui Kang, Kristopher Lavery, Wen-Li Wu, Michael Leeson, Anuja De Silva, Nelson Felix, Christopher K. Ober
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet exposure-dose sensitivity, line-width roughness, and resolution requirements. In order to quantify how trade-offs are related to the materials properties of the resist and proc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853583

25. The Effect of EUV Molecular Glass Architecture on the Bulk Dispersion of a Photo-Acid Generator
Published: 2/22/2008
Authors: David Lloyd VanderHart, Vivek M Prabhu, Anuja De Silva, Nelson Felix, Christopher K. Ober
Abstract: We have examined four molecular glasses (MGs) which are candidates for EUV photoresist formulations. These derivatized glasses and their unprotected precursors were investigated by both 1H and 13C solid state NMR in the bulk state as pure materials ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853578

26. Characterization of the In-Plane Structure of Buried Interfaces by Off-Specular X-Ray and Neutron Reflectometry
Published: 2/14/2008
Authors: Kristopher Lavery, Vivek M Prabhu, Eric K Lin, Wen-Li Wu, Kwang-Woo Choi, Sushil K. Satija, M Wormington
Abstract: Off-specular reflectivity, or diffuse scattering, probes the lateral compositional variations at surfaces and interfaces. Of particular interest is the characterization at buried interfaces for the form and amplitude of roughness. Recent advances i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852736

27. Lateral Length Scales of Latent Image Roughness as Determined by Off-Specular Neutron Reflectivity
Published: 2/14/2008
Authors: Kristopher Lavery, Vivek M Prabhu, Eric K Lin, Wen-Li Wu, Sushil K. Satija, Kwang-Woo Choi, M Wormington
Abstract: A combination of specular and off-specular neutron reflectometry was used to measure the buried lateral roughness of the reaction-diffusion front in a model extreme ultraviolet lithography photoresist. Compositional heterogeneity at the latent react ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852777

28. Direct measurement of the spatial extent of the in situ developed latent image by neutron reflectivity
Published: 12/11/2007
Authors: Vivek M Prabhu, B D. Vogt, Shuhui Kang, Eric K Lin, Sushil K. Satija
Abstract: The spatial distribution of polymer photoresist and deuterium labeled base developer highlights a fraction of the line edge that swells but does not dissolve. This residual swelling fraction remains swollen during both the in situ aqueous hydroxide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852747

29. Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist
Published: 2/25/2007
Authors: Kwang-Woo Choi, Vivek M Prabhu, Kristopher Lavery, Eric K Lin, Wen-Li Wu, John Taylor Woodward IV, Michael Leeson, H Cao, Manish Chandhok, George Thompson
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852725

30. Evaluation of the 3D Compositional Fluctuation Effect on Line-Edge-Roughness
Published: 2/25/2007
Authors: Shuhui Kang, Wen-Li Wu, B D. Vogt, Vivek M Prabhu, Eric K Lin, Karen Turnquest
Abstract: Line-edge-roughness (LER) and the relationship to resist processing and materials design is a critical problem for sub-65 nm photolithography. In this work we investigate how chemical composition fluctuations (heterogeneity) produced by the reaction ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852724



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