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Author: joseph kopanski
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Displaying records 31 to 40 of 110 records.
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31. Conductive Carbon Nanotubes for Semiconductor Metrology
Published: 8/10/2010
Authors: Joseph J Kopanski, Victor H. Vartanian, Vladimir Mancevski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin
Abstract: This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906923

32. Conductive Nanotube-based Scanning Probe Microscopy Applications
Published: 6/30/2010
Authors: Paul McClure, Vladimir Mancevski, Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella, Kathleen Dunn, Matthew D. Bresin, Phillip D. Rack, Victor H. Vartanian
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907145

33. Contact Potential Measurements on Nano-particle embedded AlGaN/Metal Interface Using Kelvin Force Microscopy
Published: 12/11/2013
Authors: Jungjoon Ahn, Min-Seok Kang, Lin You, Joseph J Kopanski, Sang-Mo Koo
Abstract: AlGaN/GaN Schottky barrier diodes (SBDs) have received much attention for high power and high- frequency applications because of the high breakdown field in the wide band gap semiconductor. Schottky contacts with tunable barrier height (ΦB) b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915012

34. DESIGN OF TEST STRUCTURE FOR 3D-STACKED INTEGRATED CIRCUITS (3D-SICS) METROLOGY
Published: 3/25/2014
Authors: Lin You, Jungjoon Ahn, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914744

35. Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins, Hyun-Keel Shin
Abstract: Photoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31874

36. Development and Characterization of Insulating Layers on Silicon Carbide: Annual Report for Feb. 14, 1988 to Feb. 14, 1989
Series: NIST Interagency/Internal Report (NISTIR)
Published: 9/1/1989
Authors: Joseph J Kopanski, Donald B. Novotny
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14440

37. Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments
Published: 12/31/1998
Authors: J. Vahakangas, Markku Lahti, M C Chang, H Edward, C F Machala, R S Martin, V Zavyalov, J S McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S Neogi, D L Ottaviani, Joseph J Kopanski, J F Machiando, Brian G. Rennex, J N Nxulamo, Y Li, D J Thomson
Abstract: The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions. R ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28568

38. Electrical Characterization of Beta Silicon Carbide MIS Capacitors with Thermally Grown or Chemical-Vapor-Deposited Oxides
Published: 12/31/1989
Authors: Joseph J Kopanski, Donald B. Novotny
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5009

39. Electrical Scanning Probe Microscopes to Address Industrial Nano-Metrology Needs of Integrated Circuits and Nanoelectronic Devices
Published: 8/25/2014
Author: Joseph J Kopanski
Abstract: , Electrical modes of scanning probe microscopes have found considerable metrology applications in integrated circuits and emerging nano-electronic devices. This paper will review the critical metrology needs that electrical SPMs have addressed in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915485

40. Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips
Published: 11/18/2011
Authors: Joseph J Kopanski, Ilona Sitnitsky, Victor H. Vartanian, Paul McClure, Vladimir Mancevski
Abstract: Electrical scanning probe microscopes, such as the scanning capacitance microscope (SCM) for two dimensional dopant profiling, scanning Kelvin force microscope (SKFM) for surface potential measurements, and the tunneling atomic force microscope (TUNA ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908834



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