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Author: joseph kopanski
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Displaying records 31 to 40 of 107 records.
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31. Conductive Nanotube-based Scanning Probe Microscopy Applications
Published: 6/30/2010
Authors: Paul McClure, Vladimir Mancevski, Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella, Kathleen Dunn, Matthew D. Bresin, Phillip D. Rack, Victor H. Vartanian

Published: 3/25/2014
Authors: Lin You, Jungjoon Ahn, Joseph J Kopanski

33. Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins, Hyun-Keel Shin
Abstract: Photoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region ...

34. Development and Characterization of Insulating Layers on Silicon Carbide: Annual Report for Feb. 14, 1988 to Feb. 14, 1989
Series: NIST Interagency/Internal Report (NISTIR)
Published: 9/1/1989
Authors: Joseph J Kopanski, Donald B. Novotny

35. Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments
Published: 12/31/1998
Authors: J. Vahakangas, Markku Lahti, M C Chang, H Edward, C F Machala, R S Martin, V Zavyalov, J S McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S Neogi, D L Ottaviani, Joseph J Kopanski, J F Machiando, Brian G. Rennex, J N Nxulamo, Y Li, D J Thomson
Abstract: The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions. R ...

36. Electrical Characterization of Beta Silicon Carbide MIS Capacitors with Thermally Grown or Chemical-Vapor-Deposited Oxides
Published: 12/31/1989
Authors: Joseph J Kopanski, Donald B. Novotny

37. Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips
Published: 11/18/2011
Authors: Joseph J Kopanski, Ilona Sitnitsky, Victor H. Vartanian, Paul McClure, Vladimir Mancevski
Abstract: Electrical scanning probe microscopes, such as the scanning capacitance microscope (SCM) for two dimensional dopant profiling, scanning Kelvin force microscope (SKFM) for surface potential measurements, and the tunneling atomic force microscope (TUNA ...

38. Enhanced Spatial Resolution Scanning Kelvin Force Microscopy Using Conductive Carbon Nanotube Tips
Published: 10/5/2009
Authors: Joseph J Kopanski, Paul McClure, Vladimir Mancevski
Abstract: The response of a scanning Kelvin force microscope (SKFM) was measured with conventional micromachined silicon tips coated with Au and with advanced tips terminated with a carbon nanotube (CNT). A simple model of the SKFM predicts enhanced spatial re ...

39. Experimental Verification of the Relation Between Two-Probe and Four-Probe Resistances
Published: 12/31/1989
Authors: Joseph J Kopanski, John Albers, G. P. Carver

40. Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: A special scanning capacitance microscopy (SCM) sample preparation method is exploited to make unipolar and p-n junction samples with different interface state densities and an identical oxide thickness. Using these samples, the interface states effe ...

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