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31. Development and Characterization of Insulating Layers on Silicon Carbide: Annual Report for Feb. 14, 1988 to Feb. 14, 1989
Series: NIST Interagency/Internal Report (NISTIR)
Published: 9/1/1989
Authors: Joseph J Kopanski, Donald B. Novotny
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14440

32. Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments
Published: 12/31/1998
Authors: J. Vahakangas, Markku Lahti, M C Chang, H Edward, C F Machala, R S Martin, V Zavyalov, J S McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S Neogi, D L Ottaviani, Joseph J Kopanski, J F Machiando, Brian G. Rennex, J N Nxulamo, Y Li, D J Thomson
Abstract: The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions. R ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28568

33. Electrical Characterization of Beta Silicon Carbide MIS Capacitors with Thermally Grown or Chemical-Vapor-Deposited Oxides
Published: 12/31/1989
Authors: Joseph J Kopanski, Donald B. Novotny
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5009

34. Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips
Published: 11/18/2011
Authors: Joseph J Kopanski, Ilona Sitnitsky, Victor H. Vartanian, Paul McClure, Vladimir Mancevski
Abstract: Electrical scanning probe microscopes, such as the scanning capacitance microscope (SCM) for two dimensional dopant profiling, scanning Kelvin force microscope (SKFM) for surface potential measurements, and the tunneling atomic force microscope (TUNA ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908834

35. Enhanced Spatial Resolution Scanning Kelvin Force Microscopy Using Conductive Carbon Nanotube Tips
Published: 10/5/2009
Authors: Joseph J Kopanski, Paul McClure, Vladimir Mancevski
Abstract: The response of a scanning Kelvin force microscope (SKFM) was measured with conventional micromachined silicon tips coated with Au and with advanced tips terminated with a carbon nanotube (CNT). A simple model of the SKFM predicts enhanced spatial re ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903125

36. Experimental Verification of the Relation Between Two-Probe and Four-Probe Resistances
Published: 12/31/1989
Authors: Joseph J Kopanski, John Albers, G. P. Carver
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8193

37. Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: A special scanning capacitance microscopy (SCM) sample preparation method is exploited to make unipolar and p-n junction samples with different interface state densities and an identical oxide thickness. Using these samples, the interface states effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31743

38. Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy
Published: 12/20/2004
Authors: Jihui Yang, Joseph J Kopanski, A Postula, M Bialkowski
Abstract: An experimental investigation of how interface states effect scanning capacitance microscopy (SCM) measurements is presented. Different sample polishing procedures were used to make SCM samples that would have different interface state densities, but ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31737

39. Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope
Published: 8/15/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk
Abstract: A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30854

40. Fast C2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
Published: 2/1/2001
Authors: Brian G. Rennex, Joseph J Kopanski, Jay F. Marchiando
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=24183