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Author: joseph kopanski
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Displaying records 11 to 20 of 105 records.
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11. Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits
Published: 12/31/1991
Authors: Joseph J Kopanski, David L. Blackburn, George Gibson Harman, David W. Berning
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=4347

12. Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits
Published: 1/20/1996
Authors: Joseph J Kopanski, David L. Blackburn, George Gibson Harman, David W. Berning
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5016

13. Atomic Force Microscope Laser Illumination Effects on a Sample and Its Application for Transient Spectroscopy
Published: 9/23/2003
Authors: Gyoung Ho Buh, Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) is used to monitor the irradiation effect on a sample in a conventional atomic force microscope (AFM). The photo-excitation of carriers in a silicon sample caused by an AFM laser is measured from SCM capacitanc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30924

14. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

15. Boron-Implanted 6H-SiC Diodes
Published: 8/1/1993
Authors: M Ghezzo, D. M. Brown, E. Downey, J K Kretchmer, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6302

16. Calibrated nanoscale dopant profiling using a scanning microwave microscope.
Published: 1/3/2012
Authors: Pavel Kabos, Thomas M Wallis, H P. Hubner, I. Humer, M. Hochleitner, M. Fenner, M. Moertelmaier, C. Rankl, Atif Imtiaz, H. Tanbakuchi, P. Hinterdorfer, J. Smoliner, Joseph J Kopanski, F. Kienberger
Abstract: The scanning microwave microscope (SMM) is used for calibrated capacitance spectroscopy and spatially resolved dopant profiling measurements. It consists of an atomic force microscope (AFM) combined with a vector network analyzer operating between 1- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908761

17. Capacitive Probe Microscopy
Published: 1/15/2002
Author: Joseph J Kopanski
Abstract: A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30079

18. Carbon nanotube applications to scanning probe microscopy for next generation semiconductor metrology
Published: 8/3/2010
Authors: Victor H. Vartanian, Paul McClure, Vladimir Mancevski, Joseph J Kopanski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin, Vincent LaBella, Kathleen Dunn
Abstract: This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907033

19. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 1/1/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=18890

20. Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions
Published: 6/1/1999
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25560



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