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Displaying records 91 to 100 of 112 records.
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91. Scanning Capacitance Microscopy for Measuring Device Carrier Profiles beyond the 100 nm Generation
Published: 12/31/2000
Authors: Joseph J Kopanski, Jay F. Marchiando, Brian G. Rennex
Abstract: The Scanning Capacitance Microscope (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-section silicon transistors. The International Technology Roadmap for Semiconductors (ITRS) ide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5920

92. Scanning Capacitance Microscopy for Profiling PN-Junctions in Silicon
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Joseph J Kopanski, Jay F. Marchiando, J R. Lowney, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=27180

93. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
Published: 9/30/2007
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R Walker
Abstract: The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32648

94. Scanning Probe Microscopes for Subsurface Imaging
Published: 5/11/2014
Authors: Joseph J Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S Obeng
Abstract: Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915483

95. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31459

96. Scanning Probe Microscopy for Dielectric and Metal Characterization
Published: 6/10/2008
Authors: Joseph J Kopanski, Thomas R Walker
Abstract: The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for chara ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32949

97. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678

98. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31861

99. Semiconductor Measurement Technology: Improved Characterization and Evaluation Measurements for HgCdTe Detector Materials, Processes and Devices Used on the GOES and TIROS Satellites
Series: Special Publication (NIST SP)
Published: 4/1/1994
Authors: David G Seiler, J R. Lowney, W. Robert Thurber, Joseph J Kopanski, George Gibson Harman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13439

100. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610



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