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Author: joseph kopanski
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Displaying records 91 to 100 of 110 records.
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91. Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere
Published: 9/30/2007
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R Walker
Abstract: The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32648

92. Scanning Probe Microscopes for Subsurface Imaging
Published: 5/11/2014
Authors: Joseph J Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S Obeng
Abstract: Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915483

93. Scanning Probe Microscopes for the Electrical Characterization of Semiconductors
Published: 3/4/2003
Author: Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31459

94. Scanning Probe Microscopy for Dielectric and Metal Characterization
Published: 6/10/2008
Authors: Joseph J Kopanski, Thomas R Walker
Abstract: The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for chara ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32949

95. Scanning Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: 7/1/1995
Authors: John A Dagata, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16678

96. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31861

97. Semiconductor Measurement Technology: Improved Characterization and Evaluation Measurements for HgCdTe Detector Materials, Processes and Devices Used on the GOES and TIROS Satellites
Series: Special Publication (NIST SP)
Published: 4/1/1994
Authors: David G Seiler, J R. Lowney, W. Robert Thurber, Joseph J Kopanski, George Gibson Harman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13439

98. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610

99. Spatial Resolution of Electrical Measurements Performed with Scanning Probe Microscope as a Function of Tip Shape
Published: 3/15/2010
Authors: Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905391

100. Specific Contact Resistivity of Metal-Semiconductor Contacts - A New, Accurate Method Linked to Spreading Resistance
Published: 12/31/1988
Authors: G. P. Carver, Joseph J Kopanski, Donald B. Novotny, R. A. Forman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15466



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