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Displaying records 91 to 100 of 105 records.
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91. Semiconductor Dopant Profiling and Dielectric Characterization with Scanning Capacitance Microscopy
Published: 11/30/2004
Author: Joseph J Kopanski
Abstract: Scanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31861

92. Semiconductor Measurement Technology: Improved Characterization and Evaluation Measurements for HgCdTe Detector Materials, Processes and Devices Used on the GOES and TIROS Satellites
Series: Special Publication (NIST SP)
Published: 4/1/1994
Authors: David G Seiler, J R. Lowney, W. Robert Thurber, Joseph J Kopanski, George Gibson Harman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13439

93. Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: 5/16/2007
Authors: Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E Ioannou, Joseph J Kopanski, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32610

94. Spatial Resolution of Electrical Measurements Performed with Scanning Probe Microscope as a Function of Tip Shape
Published: 3/15/2010
Authors: Joseph J Kopanski, Ilona Sitnitsky, Vincent LaBella
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905391

95. Specific Contact Resistivity of Metal-Semiconductor Contacts - A New, Accurate Method Linked to Spreading Resistance
Published: 12/31/1988
Authors: G. P. Carver, Joseph J Kopanski, Donald B. Novotny, R. A. Forman
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15466

96. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

97. Summer Undergraduate Research Fellowships (SURF) at the National Institute of Standards and Technology
Published: 3/15/2011
Authors: Joseph J Kopanski, Richard L Steiner, Lisa Jean Fronczek, Christopher C White, Chiara F Ferraris
Abstract: We recruit students from underrepresented groups and at Colleges and Universities with limited on-campus opportunities for research experience. We strive to provide the highest quality and challenging undergraduate research experience by involving st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908434

98. Summer Undergraduate Research Fellowships (SURF) at the National Institute of Standards and Technology: A NSF/NIST Partnership
Published: 2/1/2010
Authors: Christopher C White, Chiara F Ferraris, Lisa Jean Fronczek, Joseph J Kopanski, David B Newell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905488

99. Surface Grafting of Polypyrrole onto Silicon Wafers
Published: 8/1/2007
Authors: Daeson Sohn, Hyoseung Moon, Michael J Fasolka, Naomi Eidelman, Sang-Mo Koo, Curt A Richter, Eun S. Park, Joseph J Kopanski, Eric J. Amis
Abstract: A micromolding technique in capillaries was adapted to make uniform patterns of polypyrrole (Ppy), and the conductivities of the patterns were measured by direct contact IV curves and conductance AFM methods. Noncovalently bound Ppy patterns have hig ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854462

100. Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films
Published: 3/24/2005
Authors: Seong-Eun Park, Joseph J Kopanski, Youn-Seon Kang, Lawrence H Robins
Abstract: Undoped and Si-doped GaN epitaxial films have been grown on sapphire substrates by metal-organic chemical vapor deposition. Variable angle spectroscopic ellipsometry (VASE) and surface photovoltage (SPV) spectroscopy were used to determine the minori ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31729



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