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Author: andras vladar

Displaying records 141 to 148.
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141. Workshop Report 3: Edge Positions From Scanning Electron Microscope Signals by Comparing Models With Measure
Published: 8/6/1995
Authors: J R. Lowney, Michael T Postek, Andras Vladar
Abstract: There is a pressing need in the semiconductor industry to determine the dimensions of lithographically produced features on wafers and masks down to the l0?nm level of accuracy. Such measurements involve the accurate location of line edges, the subtr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820745

142. Workshop Report 1: Scanning Electron Microscope Metrology as Related to a Defined Edge Structure
Published: 1/1/1995
Authors: Michael T Postek, Andras Vladar, G Banke, T Reilly
Abstract: An accurate electron beam model is primary to the understanding of the SEM image. Several independently developed Monte Carlo models have been introduced for this purpose and a modeling round-robin has just been conducted to compare the results of th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820756

143. A Monte Carlo Model for SEM Linewidth Metrology
Published: 12/31/1994
Authors: J R. Lowney, Michael T Postek, Andras Vladar
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=1721

144. Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology
Published: 12/31/1994
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, E Marx, Robert D. Larrabee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28049

145. A Monte Carlo Model for SEM Linewidth Metrology
Published: 5/1/1994
Authors: J R. Lowney, Michael T Postek, Andras Vladar
Abstract: A scanning electron microscope (SEM) can be used to measure the dimensions of the microlithographic features of integrated circuits. However, without a good model of the electron-beam / specimen interaction, accurate edge location cannot be obtained. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820689

146. Electron Beam Interaction Modeling as Applied to X-Ray Lithography Mask SEM Linewidth Metrology
Published: 1/1/1994
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, Egon Marx, Robert D. Larrabee
Abstract: This work provides an approach to improved x?ray mask linewidth metrology and a more precise edge location algorithm for measurement of feature sizes on x?ray masks in commercial instrumentation. The transmitted electron detection mode is also useful ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820704

147. X-Ray Mask Metrology: The Development of Linewidth Standards for X-Ray Lithography
Published: 12/31/1993
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, E Marx, Robert D. Larrabee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=15044

148. X-Ray Lithography Mask Metrology: Use of Transmitted Electrons in an SEM for Linewidth Measurement
Series: Journal of Research (NIST JRES)
Published: 8/1/1993
Authors: Michael T Postek, J R. Lowney, Andras Vladar, William J. Keery, E Marx, Robert D. Larrabee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10599



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