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You searched on: Author: john villarrubia

Displaying records 21 to 30 of 94 records.
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21. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...

22. Monte Carlo Modeling of Secondary Electron Imaging in Three Dimensions
Published: 3/1/2007
Authors: John S Villarrubia, Nicholas W m Ritchie, J R. Lowney

23. General Three-Dimensional Image Simulation and Surface Reconstruction in Scanning Probe Microscopy Using a Dexel Representation
Published: 1/1/2007
Authors: Xiaoping Qian, John S Villarrubia
Abstract: The ability to image complex general three-dimensional (3D) structures, including re-entrant surfaces and undercut features using scanning probe microscopy, is becoming increasing important in many small length-scale applications.  This paper pr ...

24. Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results
Published: 1/1/2007
Authors: Chengqing C. Wang, J C Roberts, Robert Bristol, B Bunday, Ronald Leland Jones, Eric K Lin, Wen-Li Wu, John S Villarrubia, Kwang-Woo Choi, James S Clarke, Bryan J Rice, Michael Leeson
Abstract: he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provide ...

25. Bias Reduction in Roughness Measurement through SEM Noise Removal
Published: 3/24/2006
Authors: R Katz, C D Chase, R Kris, R Peltinov, John S Villarrubia, B Bunday
Abstract: The importance of Critical Dimension (CD) roughness metrics such as Line and Contact edge roughness (LER, CER) and their associated width metrics (LWR, CWR) have been dealt with widely in the literature and are becoming semiconductor industry standar ...

26. Advanced Metrology Needs for Nanotechnology and Nanomanufacturing
Published: 11/1/2005
Authors: Michael T Postek, John S Villarrubia, Andras Vladar
Abstract: Advances in fundamental nanoscience, design of nanomaterials, and ultimately manufacturing of nanometer scale products all depend to some degree on the capability to accurately and reproducibly measure dimensions, properties, and performance characte ...

27. Scanning electron microscope dimensional metrology using a model-based library
Published: 11/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are s ...

28. Issues in Line Edge and Linewidth Roughness Metrology
Published: 9/9/2005
Author: John S Villarrubia
Abstract: In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen samplin ...

29. A Simulation Study of Repeatability and Bias in the CD-SEM
Published: 7/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines depends on the instrument?s measurement repeatability and any sample dependent biases. The dependence of repeatabil ...

30. Unbiased Estimation of Linewidth Roughness
Published: 5/1/2005
Authors: John S Villarrubia, B Bunday
Abstract: Line width roughness (LWR) is usually estimated simply as three standard deviations of the line width. The effect of image noise upon this metric includes a positive nonrandom component. The metric is therefore subject to a bias or ?systematic error? ...

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