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Author: john villarrubia

Displaying records 21 to 30 of 86 records.
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21. A Simulation Study of Repeatability and Bias in the CD-SEM
Published: 7/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines depends on the instrument?s measurement repeatability and any sample dependent biases. The dependence of repeatabil ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822536

22. Unbiased Estimation of Linewidth Roughness
Published: 5/1/2005
Authors: John S Villarrubia, B Bunday
Abstract: Line width roughness (LWR) is usually estimated simply as three standard deviations of the line width. The effect of image noise upon this metric includes a positive nonrandom component. The metric is therefore subject to a bias or ?systematic error? ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822373

23. Scanning Electron Microscope Dimensional Metrology Using a Model-Based Library
Published: 4/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822251

24. Influence of Focus Variation on Linewidth Measurements
Published: 3/3/2005
Authors: M Tanaka, John S Villarrubia, Andras Vladar
Abstract: The influence of spatial resolution on line width measurements in the critical dimension scanning electron microscope (CD-SEM) was investigated experimentally. Measurement bias variation and measurement repeatabilities of four edge detection algorith ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822391

25. Issues in Line Edge and Linewidth Roughness Metrology
Published: 1/1/2005
Author: John S Villarrubia
Abstract: In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen samplin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822535

26. Scanning Electron Microscope Dimensional Metrology using a Model-based Library
Published: 1/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822374

27. Test of CD-SEM Shape-Sensitive Linewidth Measurement
Published: 7/1/2004
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: In a model-based library (MBL) approach to scanning electron microscope (SEM) linewidth measurement, a library of simulation results for a range of lineshapes is searched for a match to the measured image of the unknown line. Compared to standard alg ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823157

28. Determination of Optimal Parameters for CD-SEM Measurement of Line Edge Roughness
Published: 5/1/2004
Authors: B Bunday, M R Bishop, D Mccormack, John S Villarrubia, Andras Vladar, Theodore Vincent Vorburger, Ndubuisi George Orji, J Allgair
Abstract: The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822538

29. Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach
Published: 5/1/2004
Authors: John S Villarrubia, Andras Vladar, B Bunday, M R Bishop
Abstract: The widths of 284 lines in a 193 nm resist were measured by two methods and the results compared. One method was scanning electron microscopy (SEM) of cross-sections. The other was a model-based library (MBL) approach in which top-down CD-SEM line sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822158

30. Development of Photomask Artifacts and Metrology for the 65 nm Device Generation with Extensibility Beyond
Published: 1/1/2004
Authors: Andras Vladar, Richard M Silver, James Edward Potzick, John S Villarrubia
Abstract: The purpose of this project was to explore the currently used mask metrology methods and tools, to further develop mask metrology, and to design, fabricate and measure a new, relevant, 193 nm phase shifting mask metrology mask. These tasks were succe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822365



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