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Author: john villarrubia

Displaying records 11 to 20 of 88 records.
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11. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Interim Report for 1st year of project
Published: 3/1/2010
Author: John S Villarrubia
Abstract: This report summarizes results from the first year of a 2-year project to develop a simulator for electron beam (e-beam) inspection and critical dimension-scanning electron microscope (CD-SEM) inline metrology tools. The goal is to improve on previou ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904929

12. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Published: 9/1/2009
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902308

13. Sensitivity of SEM width measurements to model assumptions
Published: 3/31/2009
Authors: John S Villarrubia, Zejun Ding
Abstract: The most accurate width measurements in a scanning electron microscope (SEM) require raw images to be corrected for instrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction. Models differ in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901733

14. Blind estimation of general tip shape in AFM imaging
Published: 12/1/2008
Authors: Fenglei Tian, Xiaoping Qian, John S Villarrubia
Abstract: The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824643

15. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

16. Monte Carlo Modeling of Secondary Electron Imaging in Three Dimensions
Published: 3/1/2007
Authors: John S Villarrubia, Nicholas W m Ritchie, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913838

17. General Three-Dimensional Image Simulation and Surface Reconstruction in Scanning Probe Microscopy Using a Dexel Representation
Published: 1/1/2007
Authors: Xiaoping Qian, John S Villarrubia
Abstract: The ability to image complex general three-dimensional (3D) structures, including re-entrant surfaces and undercut features using scanning probe microscopy, is becoming increasing important in many small length-scale applications.  This paper pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823221

18. Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results
Published: 1/1/2007
Authors: Chengqing C. Wang, J C Roberts, Robert Bristol, B Bunday, Ronald Leland Jones, Eric K Lin, Wen-Li Wu, John S Villarrubia, Kwang-Woo Choi, James S Clarke, Bryan J Rice, Michael Leeson
Abstract: he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852720

19. Bias Reduction in Roughness Measurement through SEM Noise Removal
Published: 3/24/2006
Authors: R Katz, C D Chase, R Kris, R Peltinov, John S Villarrubia, B Bunday
Abstract: The importance of Critical Dimension (CD) roughness metrics such as Line and Contact edge roughness (LER, CER) and their associated width metrics (LWR, CWR) have been dealt with widely in the literature and are becoming semiconductor industry standar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824600

20. Advanced Metrology Needs for Nanotechnology and Nanomanufacturing
Published: 11/1/2005
Authors: Michael T Postek, John S Villarrubia, Andras Vladar
Abstract: Advances in fundamental nanoscience, design of nanomaterials, and ultimately manufacturing of nanometer scale products all depend to some degree on the capability to accurately and reproducibly measure dimensions, properties, and performance characte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822376



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