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You searched on: Author: john villarrubia

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11. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report
Published: 1/1/2011
Author: John S Villarrubia
Abstract: This report summarizes results from a two-year project to develop a simulator for electron beam inspection and critical dimension scanning electron microscope (SEM) inline metrology tools. The development attempts to improve on prior simulators and d ...

12. Proximity-associated errors in contour metrology
Published: 3/31/2010
Authors: John S Villarrubia, Ronald G Dixson, Andras Vladar
Abstract: In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a bright ...

13. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Interim Report for 1st year of project
Published: 3/1/2010
Author: John S Villarrubia
Abstract: This report summarizes results from the first year of a 2-year project to develop a simulator for electron beam (e-beam) inspection and critical dimension-scanning electron microscope (CD-SEM) inline metrology tools. The goal is to improve on previou ...

14. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Published: 9/1/2009
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...

15. Sensitivity of SEM width measurements to model assumptions
Published: 3/31/2009
Authors: John S Villarrubia, Zejun Ding
Abstract: The most accurate width measurements in a scanning electron microscope (SEM) require raw images to be corrected for instrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction. Models differ in ...

16. Blind estimation of general tip shape in AFM imaging
Published: 12/1/2008
Authors: Fenglei Tian, Xiaoping Qian, John S Villarrubia
Abstract: The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distor ...

17. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...

18. Monte Carlo Modeling of Secondary Electron Imaging in Three Dimensions
Published: 3/1/2007
Authors: John S Villarrubia, Nicholas W m Ritchie, J R. Lowney

19. General Three-Dimensional Image Simulation and Surface Reconstruction in Scanning Probe Microscopy Using a Dexel Representation
Published: 1/1/2007
Authors: Xiaoping Qian, John S Villarrubia
Abstract: The ability to image complex general three-dimensional (3D) structures, including re-entrant surfaces and undercut features using scanning probe microscopy, is becoming increasing important in many small length-scale applications.  This paper pr ...

20. Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results
Published: 1/1/2007
Authors: Chengqing C. Wang, J C Roberts, Robert Bristol, B Bunday, Ronald Leland Jones, Eric K Lin, Wen-Li Wu, John S Villarrubia, Kwang-Woo Choi, James S Clarke, Bryan J Rice, Michael Leeson
Abstract: he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provide ...

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