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You searched on: Author: john villarrubia

Displaying records 11 to 20 of 94 records.
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11. Can We Get 3D CD Metrology Right?
Published: 4/19/2012
Authors: Andras Vladar, John S Villarrubia, Michael T Postek, Petr Cizmar
Abstract: Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, we‰ve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911117

12. SEM imaging of ultra-high aspect ratio hole features
Published: 3/29/2012
Authors: John S Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
Abstract: In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Neverth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910884

13. Stylus Tip-Size Effect on the Calibration of Periodic Roughness Specimens with Rectangular Profiles
Published: 3/21/2012
Authors: Thomas B Renegar, Johannes A Soons, Balasubramanian Muralikrishnan, John S Villarrubia, Xiaoyu A Zheng, Theodore Vincent Vorburger, Jun-Feng Song
Abstract: Stylus instruments are widely used for surface characterization. It is well known that the size and shape of the stylus tip affects the measured surface geometry and parameters. In most cases, increasing the tip size decreases the measured Ra value b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911079

14. VCI Simulation with Semiconductor Device Models: Test Report
Published: 2/29/2012
Author: John S Villarrubia
Abstract: JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910799

15. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report
Published: 1/1/2011
Author: John S Villarrubia
Abstract: This report summarizes results from a two-year project to develop a simulator for electron beam inspection and critical dimension scanning electron microscope (SEM) inline metrology tools. The development attempts to improve on prior simulators and d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907582

16. Proximity-associated errors in contour metrology
Published: 3/31/2010
Authors: John S Villarrubia, Ronald G Dixson, Andras Vladar
Abstract: In contour metrology the CD-SEM (critical dimension scanning electron microscope) assigns a continuous boundary to extended features in an image. The boundary is typically assigned as a simple function of the signal intensity, for example by a bright ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905141

17. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Interim Report for 1st year of project
Published: 3/1/2010
Author: John S Villarrubia
Abstract: This report summarizes results from the first year of a 2-year project to develop a simulator for electron beam (e-beam) inspection and critical dimension-scanning electron microscope (CD-SEM) inline metrology tools. The goal is to improve on previou ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904929

18. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Published: 9/1/2009
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902308

19. Sensitivity of SEM width measurements to model assumptions
Published: 3/31/2009
Authors: John S Villarrubia, Zejun Ding
Abstract: The most accurate width measurements in a scanning electron microscope (SEM) require raw images to be corrected for instrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction. Models differ in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901733

20. Blind estimation of general tip shape in AFM imaging
Published: 12/1/2008
Authors: Fenglei Tian, Xiaoping Qian, John S Villarrubia
Abstract: The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824643



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