NIST logo

Publications Portal

You searched on:
Author: john villarrubia

Displaying records 11 to 20 of 85 records.
Resort by: Date / Title


11. Blind estimation of general tip shape in AFM imaging
Published: 12/1/2008
Authors: Fenglei Tian, Xiaoping Qian, John S Villarrubia
Abstract: The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824643

12. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

13. Monte Carlo Modeling of Secondary Electron Imaging in Three Dimensions
Published: 3/1/2007
Authors: John S Villarrubia, Nicholas W m Ritchie, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913838

14. General Three-Dimensional Image Simulation and Surface Reconstruction in Scanning Probe Microscopy Using a Dexel Representation
Published: 1/1/2007
Authors: Xiaoping Qian, John S Villarrubia
Abstract: The ability to image complex general three-dimensional (3D) structures, including re-entrant surfaces and undercut features using scanning probe microscopy, is becoming increasing important in many small length-scale applications.  This paper pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823221

15. Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results
Published: 1/1/2007
Authors: Chengqing C. Wang, J C Roberts, Robert Bristol, B Bunday, Ronald Leland Jones, Eric K Lin, Wen-Li Wu, John S Villarrubia, Kwang-Woo Choi, James S Clarke, Bryan J Rice, Michael Leeson
Abstract: he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provide ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852720

16. Bias Reduction in Roughness Measurement through SEM Noise Removal
Published: 3/24/2006
Authors: R Katz, C D Chase, R Kris, R Peltinov, John S Villarrubia, B Bunday
Abstract: The importance of Critical Dimension (CD) roughness metrics such as Line and Contact edge roughness (LER, CER) and their associated width metrics (LWR, CWR) have been dealt with widely in the literature and are becoming semiconductor industry standar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824600

17. Advanced Metrology Needs for Nanotechnology and Nanomanufacturing
Published: 11/1/2005
Authors: Michael T Postek, John S Villarrubia, Andras Vladar
Abstract: Advances in fundamental nanoscience, design of nanomaterials, and ultimately manufacturing of nanometer scale products all depend to some degree on the capability to accurately and reproducibly measure dimensions, properties, and performance characte ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822376

18. Scanning electron microscope dimensional metrology using a model-based library
Published: 11/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822537

19. Issues in Line Edge and Linewidth Roughness Metrology
Published: 9/9/2005
Author: John S Villarrubia
Abstract: In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen samplin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822372

20. A Simulation Study of Repeatability and Bias in the CD-SEM
Published: 7/1/2005
Authors: John S Villarrubia, Andras Vladar, Michael T Postek
Abstract: Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines depends on the instrument?s measurement repeatability and any sample dependent biases. The dependence of repeatabil ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822536



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series