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You searched on: Author: mark vaudin

Displaying records 31 to 40 of 85 records.
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31. Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors
Published: 1/22/2007
Authors: Abhishek Motayed, Mark D Vaudin, A V Davydov, J Meingalilis, Maoqi He, S. N. Mohammad
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854343

32. Correlations Between the Crystallographic Texture and Grain Boundary Character in Polycrystalline Materials
Published: 1/1/2007
Authors: R E Garcia, Mark D Vaudin
Abstract: A method is presented to determine the misorientation probability distribution function in polycrystalline materials based on a known, analytical or numerical, representation of the associated orientation probability distribution function, i.e., text ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=851000

33. Phase Transformations in the High Tc Superconducting Compounds, Ba2RCu3O6+ (R-Nd, Sm, Gd, Y, Ho, and Er)
Series: Journal of Research (NIST JRES)
Report Number: 111
Published: 9/1/2006
Authors: Winnie K Wong-Ng, Lawrence P. Cook, H Su, Mark D Vaudin, C. K. Chiang, D O Welch, Edwin R. Fuller, Zhi Yang, Lawrence Herman Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854178

34. Fabrication of GaN-based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: 7/15/2006
Authors: Abhishek Motayed, A V Davydov, Mark D Vaudin, John Melngailis, S. N. Mohammad
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854231

35. Texture Measurements in <001> Fiber-Oriented PMN-PT
Published: 4/9/2006
Authors: Kristen H Brosnan, G L Messing, Richard J Meyer, Mark D Vaudin
Abstract: Textured (1-x)(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) ceramics obtained by the templated grain growth (TGG) process a significant fraction of the piezoelectric properties of the Bridgman growth single crystals at a fraction of the cost. These materials could ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850936

36. Nanometer Scale Crystallographic Texture Mapping of Platinum and Lead Zirconate Titanate Thin Films by Electron Backscatter Diffraction
Published: 3/9/2006
Authors: G R Fox, X Han, T Maitland, Mark D Vaudin
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850819

37. High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires
Published: 1/1/2006
Authors: Kristine A Bertness, Alexana Roshko, Albert Davydov, Igor Levin, Mark D Vaudin, Joy Barker, John B. Schlager, Norman A Sanford, Lawrence H Robins
Abstract: We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32144

38. Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012
Published: 11/1/2005
Authors: Youn Seon Kang, Lawrence H Robins, Anthony Birdwell, Alexander J. Shapiro, W. Robert Thurber, Mark D Vaudin, M M Fahmi, D Bryson, S N Mohammad
Abstract: The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850826

39. Horizontal Growth and In Situ Assembly of Oriented ZnO Nanowires
Published: 3/13/2005
Authors: Babak Nikoobakht, Chris A Michaels, Mark D Vaudin, Stephan J Stranick
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854241

40. Photoreflectance Study of the Electronic Structure of Si-Doped InyGa^d1-y^As^d1-x^N^dx^ Films With x<0.012
Published: 3/1/2005
Authors: Youn Seon Kang, Lawrence H Robins, Anthony Birdwell, Alexander J. Shapiro, W. Robert Thurber, Mark D Vaudin, M M Fahmi, D Bryson, S N Mohammad
Abstract: The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between20 K and 300 K. The measured critical-point energies were ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850822



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