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You searched on: Author: mark vaudin

Displaying records 31 to 40 of 85 records.
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31. Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors
Published: 1/22/2007
Authors: Abhishek Motayed, Mark D Vaudin, A V Davydov, J Meingalilis, Maoqi He, S. N. Mohammad

32. Correlations Between the Crystallographic Texture and Grain Boundary Character in Polycrystalline Materials
Published: 1/1/2007
Authors: R E Garcia, Mark D Vaudin
Abstract: A method is presented to determine the misorientation probability distribution function in polycrystalline materials based on a known, analytical or numerical, representation of the associated orientation probability distribution function, i.e., text ...

33. Phase Transformations in the High Tc Superconducting Compounds, Ba2RCu3O6+ (R-Nd, Sm, Gd, Y, Ho, and Er)
Series: Journal of Research (NIST JRES)
Report Number: 111
Published: 9/1/2006
Authors: Winnie K Wong-Ng, Lawrence P. Cook, H Su, Mark D Vaudin, C. K. Chiang, D O Welch, Edwin R. Fuller, Zhi Yang, Lawrence Herman Bennett

34. Fabrication of GaN-based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: 7/15/2006
Authors: Abhishek Motayed, A V Davydov, Mark D Vaudin, John Melngailis, S. N. Mohammad

35. Texture Measurements in <001> Fiber-Oriented PMN-PT
Published: 4/9/2006
Authors: Kristen H Brosnan, G L Messing, Richard J Meyer, Mark D Vaudin
Abstract: Textured (1-x)(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) ceramics obtained by the templated grain growth (TGG) process a significant fraction of the piezoelectric properties of the Bridgman growth single crystals at a fraction of the cost. These materials could ...

36. Nanometer Scale Crystallographic Texture Mapping of Platinum and Lead Zirconate Titanate Thin Films by Electron Backscatter Diffraction
Published: 3/9/2006
Authors: G R Fox, X Han, T Maitland, Mark D Vaudin

37. High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires
Published: 1/1/2006
Authors: Kristine A Bertness, Alexana Roshko, Albert Davydov, Igor Levin, Mark D Vaudin, Joy Barker, John B. Schlager, Norman A Sanford, Lawrence H Robins
Abstract: We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low ...

38. Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012
Published: 11/1/2005
Authors: Youn Seon Kang, Lawrence H Robins, Anthony Birdwell, Alexander J. Shapiro, W. Robert Thurber, Mark D Vaudin, M M Fahmi, D Bryson, S N Mohammad
Abstract: The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximate ...

39. Horizontal Growth and In Situ Assembly of Oriented ZnO Nanowires
Published: 3/13/2005
Authors: Babak Nikoobakht, Chris A Michaels, Mark D Vaudin, Stephan J Stranick

40. Photoreflectance Study of the Electronic Structure of Si-Doped InyGa^d1-y^As^d1-x^N^dx^ Films With x<0.012
Published: 3/1/2005
Authors: Youn Seon Kang, Lawrence H Robins, Anthony Birdwell, Alexander J. Shapiro, W. Robert Thurber, Mark D Vaudin, M M Fahmi, D Bryson, S N Mohammad
Abstract: The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between20 K and 300 K. The measured critical-point energies were ...

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