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You searched on: Author: mark vaudin

Displaying records 21 to 30 of 81 records.
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21. Electrodeposition of Bismuth from Nitric Acid Electrolyte
Published: 6/20/2007
Authors: E Sandnes, Maureen E Williams, Ugo Bertocci, Mark D Vaudin, Gery R Stafford

22. Electrodeposition of Bismuth From Nitric Acid Electrolyte
Published: 4/2/2007
Authors: E Sandnes, Maureen E Williams, Ugo Bertocci, Mark D Vaudin, Gery R Stafford
Abstract: The electrodeposition of Bi from acidic nitrate solution was examined. Bismuth deposition was determined to be quasi-reversible on Au, with a current efficiency of 100%, based on integration of deposition and stripping voltammetric waves. No interf ...

23. X-ray Diffraction Study of the Optimization of MgO Growth Conditions for Magnetic Tunnel Junctions
Published: 4/1/2007
Authors: O S Lee, C -G Shapiro, A J Egelhoff, Mark D Vaudin, Jennifer L Klamo, J Mallett, P. W. T. Pong

24. Phase Relations in the Ba-Y-Cu-O Films on SrTiO3 for the -Ex Situ BaF2- Process
Published: 3/5/2007
Authors: Winnie K Wong-Ng, Makoto Otani, Lawrence P. Cook, Mark D Vaudin, James P Cline, Ron Feenstra, T G Holesinger

25. Electrodeposited Epitaxial Fe subscript (100-x)Co subscript {x} Films on GaAS
Published: 2/1/2007
Authors: J Mallett, Erik B. Svedberg, Mark D Vaudin, Leonid A Bendersky, Alexander J. Shapiro, W F Egelhoff, Thomas P Moffat

26. Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors
Published: 1/22/2007
Authors: Abhishek Motayed, Mark D Vaudin, A V Davydov, J Meingalilis, Maoqi He, S. N. Mohammad

27. Correlations Between the Crystallographic Texture and Grain Boundary Character in Polycrystalline Materials
Published: 1/1/2007
Authors: R E Garcia, Mark D Vaudin
Abstract: A method is presented to determine the misorientation probability distribution function in polycrystalline materials based on a known, analytical or numerical, representation of the associated orientation probability distribution function, i.e., text ...

28. Phase Transformations in the High Tc Superconducting Compounds, Ba2RCu3O6+ (R-Nd, Sm, Gd, Y, Ho, and Er)
Series: Journal of Research (NIST JRES)
Report Number: 111
Published: 9/1/2006
Authors: Winnie K Wong-Ng, Lawrence P. Cook, H Su, Mark D Vaudin, C. K. Chiang, D O Welch, Edwin R. Fuller, Zhi Yang, Lawrence Herman Bennett

29. Fabrication of GaN-based Nanoscale Device Structures Utilizing Focused Ion Beam Induced Pt Deposition
Published: 7/15/2006
Authors: Abhishek Motayed, A V Davydov, Mark D Vaudin, John Melngailis, S. N. Mohammad

30. Texture Measurements in <001> Fiber-Oriented PMN-PT
Published: 6/1/2006
Authors: Kristen H Brosnan, G L Messing, Richard J Meyer, Mark D Vaudin

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