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Author: john suehle

Displaying records 31 to 40 of 179 records.
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31. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published: 10/14/2009
Authors: Liangchun Yu, Kin P Cheung, Greg Dunne, Kevin Matocha, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907099

32. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/11/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

33. Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories
Published: 10/6/2009
Authors: Xiaoxiao Zhu, H Gu, Qiliang Li, Helmut Baumgart, D. E Ioannou, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907139

34. Silicon Nanowire NVM with High-k Gate Dielectric Stack
Published: 9/1/2009
Authors: Xiaoxiao Zhu, D. Gu, Qiliang Li, D. Ioannoua, H. Baumgart, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904090

35. Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling
Published: 6/24/2009
Authors: Qiliang Li, Xiaoxiao Zhu, D. Ioannou, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904092

36. Flexible Solution-Processed Memristors
Published: 6/3/2009
Authors: Nadine Emily Gergel-Hackett, Behrang H Hamadani, B Dunlap, John S Suehle, Curt A Richter, Christina Ann Hacker, David J Gundlach
Abstract: We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoreticall ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900874

37. Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs
Published: 5/18/2009
Authors: Jason P Campbell, Liangchun Yu, Kin P Cheung, Jin Qin, John S Suehle, A Oates, Kuang Sheng
Abstract: We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902184

38. The Negative Bias Temperature Instability vs. High-Field Stress Paradigm
Published: 5/18/2009
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradatio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902213

39. Random Telegraph Noise in Highly Scaled nMOSFETs
Published: 4/26/2009
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901584

40. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900181



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