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Displaying records 11 to 20 of 121 records.
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11. NIST SURFACE ROUGHNESS AND STEP HEIGHT CALIBRATIONS, Measurement Conditions and Sources of Uncertainty
Published: 3/18/2014
Authors: Theodore Vincent Vorburger, Thomas B Renegar, Xiaoyu A Zheng, Jun-Feng Song, Johannes A Soons, Richard M Silver
Abstract: NIST methods for calibration of surface roughness parameters and step height are described. The surface roughness parameters currently being measured include roughness average (Ra), root mean square (rms) roughness (Rq), average maximum height of the ...

12. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...

13. Quantitative microscope characterization for parametric measurements with sub-nm parametric uncertainties
Published: 9/23/2013
Authors: Bryan M Barnes, Jing Qin, Hui Zhou, Richard M Silver
Abstract: Recently, a new technique called Fourier normalization has enabled the parametric fitting of optical images with multiple or even a continuum of spatial frequencies. Integral to the performance of this methodology is the characterization of the high ...

14. Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction
Published: 9/5/2013
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Francois R. Goasmat
Abstract: There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimens ...

15. Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection
Published: 6/24/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity ...

16. 3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties
Published: 6/23/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatt ...

17. Distributed Force Probe Bending Model of CD-AFM Bias
Published: 4/1/2013
Authors: Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and signif ...

18. 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization
Published: 3/25/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield micr ...

19. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Published: 3/25/2013
Authors: Martin Y Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...

Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois R. Goasmat, Hui Zhou, Martin Y Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...

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