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Displaying records 111 to 119.
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111. Metrology with the Ultraviolet Scanning Transmission Microscope
Published: 5/1/1995
Authors: Richard M Silver, James Edward Potzick, Y Hu
Abstract: A novel design for an ultraviolet critical dimension measurement transmission microscope utilizing the Stewart platform as the rigid main structure has been implemented. This new design shows improved vibration characteristics and is able to accommod ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820765

112. Overlay Measurements and Standards
Published: 5/1/1995
Authors: Richard M Silver, James Edward Potzick, Robert D. Larrabee
Abstract: The relative misalignment of features produced by different mask levels (i.e., overlay error) is projected to become an increasingly important problem to the semiconductor industry as the size of the critical features continues to decrease. In respon ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820766

113. Air and Vacuum STM/S of Bulk-Doped GaAs and pn Junctions
Series: NIST Interagency/Internal Report (NISTIR)
Published: 12/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=20047

114. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820713

115. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur- and Oxygen-Terminated Gallium Arsenide
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, W. F. Tseng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25904

116. Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Published: 2/1/1994
Authors: W. F. Tseng, John A Dagata, Richard M Silver, Joseph Fu, J R. Lowney
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13544

117. Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Published: 9/5/1993
Authors: H. W. Tseng, John A Dagata, Richard M Silver, Joseph Fu, J R. Lowney
Abstract: Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetric ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820723

118. Scanning Tunneling Microscopy of Passivated Gallium Arsenide Under Ambient Conditions
Published: 8/1/1993
Authors: John A Dagata, W. F. Tseng, Richard M Silver
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=14568

119. Imaging Optics and CCD Camera Characterization for Metrology
Published: Date unknown
Authors: S Fox, Edward A Kornegay, Richard M Silver
Abstract: Optical semiconductor characterization and metrology rely heavily on digital camera imaging and its associated optical imaging systems. This work characterizes the performance of a widely used, commercially available camera and compares its performan ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820962



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