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Author: curt richter
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1. A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published: 3/10/2003
Authors: Eric M. Vogel, Curt A Richter, Brian G. Rennex
Abstract: We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17822

2. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr, Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=16

3. A Comparison of Thickness Values for Very Thin SiO2 Films by Using Ellipsometric, Capacitance-Voltage and HRTEM Measurements
Published: 1/3/2006
Authors: James R. Ehrstein, Curt A Richter, Deane Chandler-Horowitz, Eric M. Vogel, Chadwin Young, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold
Abstract: Abstract. A comparison study of very thin SiO2 film thickness values obtained from the three dominant measure-ment techniques used in the Integrated Circuit industry: ellipsometry, capacitance-voltage (C-V) measurements and transmission electron micr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31799

4. A Flexible Solution-Processed Memristor
Published: 4/14/2010
Authors: Nadine Emily Gergel-Hackett, Laurie A. Stephey, Barbara Dunlap, Joseph Leo Tedesco, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905413

5. A Flexible Solution-Processed Memristor
Published: 4/12/2010
Authors: Nadine Emily Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Joseph Leo Tedesco, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907156

6. A Flexible TiO2-Based Memristor
Published: 2/2/2010
Authors: Nadine Emily Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907110

7. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912713

8. Advanced Capacitance Metrology for Nanoelectronic Device Characterization
Published: 10/5/2009
Authors: Curt A Richter, Joseph J Kopanski, Yicheng Wang, Muhammad Yaqub Afridi, Xiaoxiao Zhu, D. E Ioannou, Qiliang Li, Chong Jiang
Abstract: We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MIM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903268

9. Advanced Capacitance Metrology for Nanoscale Device Characterization
Published: 4/29/2010
Authors: Joseph Leo Tedesco, Nadine Emily Gergel-Hackett, Laurie A. Stephey, Christina Ann Hacker, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906391

10. Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics
Published: 12/2/1999
Authors: Curt A Richter, Nhan V Nguyen, G A Alers, X Guo, Xiaorui Wang, T P Ma, T Tamagawa
Abstract: Extended abstract on Analytical Spectroscopic Ellipsometry of Ta^d2^O^d5^ and TiO^d2^ for Use as High-k Gate Dielectrics. Opening paragraph of abstract: There is tremendous interest in high dielectric constant (high-k) films to use as alternates to S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30167



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