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You searched on: Author: curt richter Sorted by: title

Displaying records 1 to 10 of 176 records.
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1. A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published: 3/10/2003
Authors: Eric M. Vogel, Curt A Richter, Brian G. Rennex
Abstract: We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solu ...

2. A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: 1/1/2001
Authors: Curt A Richter, Allen R Hefner Jr., Eric M. Vogel
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have s ...

3. A Comparison of Thickness Values for Very Thin SiO2 Films by Using Ellipsometric, Capacitance-Voltage and HRTEM Measurements
Published: 1/3/2006
Authors: James R. Ehrstein, Curt A Richter, Deane Chandler-Horowitz, Eric M. Vogel, Chadwin Young, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold
Abstract: Abstract. A comparison study of very thin SiO2 film thickness values obtained from the three dominant measure-ment techniques used in the Integrated Circuit industry: ellipsometry, capacitance-voltage (C-V) measurements and transmission electron micr ...

4. A Flexible Solution-Processed Memristor
Published: 4/14/2010
Authors: Nadine Emily Gergel-Hackett, Laurie A. Stephey, Barbara Dunlap, Joseph Leo Tedesco, Curt A Richter

5. A Flexible Solution-Processed Memristor
Published: 4/12/2010
Authors: Nadine Emily Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Joseph Leo Tedesco, Curt A Richter

6. A Flexible TiO2-Based Memristor
Published: 2/2/2010
Authors: Nadine Emily Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter

7. A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published: 1/2/0013
Authors: Qin Q. Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A Kirillov, David J Gundlach, Curt A Richter, Nhan V Nguyen
Abstract: We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band a ...

8. Advanced Capacitance Metrology for Nanoelectronic Device Characterization
Published: 10/5/2009
Authors: Curt A Richter, Joseph J Kopanski, Yicheng Wang, Muhammad Yaqub Afridi, Xiaoxiao Zhu, D. E Ioannou, Qiliang Li, Chong Jiang
Abstract: We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MIM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches ...

9. Advanced Capacitance Metrology for Nanoscale Device Characterization
Published: 4/29/2010
Authors: Joseph Leo Tedesco, Nadine Emily Gergel-Hackett, Laurie A. Stephey, Christina Ann Hacker, Curt A Richter

10. Advanced Experimental Methods for Low-Temperature Magnetotransport Measurement of Novel Materials
Published: 1/21/2016
Authors: Joseph A Hagmann, Son Truong Le, Curt A Richter, David G Seiler
Abstract: Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a chall ...

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