NIST logo

Publications Portal

You searched on:
Author: curt richter

Displaying records 131 to 140 of 170 records.
Resort by: Date / Title


131. Metrology Development for the Nanoelectronics Industry at the National Institute of Standards and Technology
Published: 3/7/2004
Authors: Joaquin (Jack) Martinez, John A Dagata, Curt A Richter, Richard M Silver
Abstract: The National Institute of Standards and Technology has provided and continues to provide critical metrology development for the semiconductor manufacturing industry as it moves from the microelectronic era into the nanoelectronic era. This presentaio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31539

132. Asymmetric Energy Distribution of Interface Traps in n- & p- MOSFETs with HfO2 Gate Dielectric on Ultra-thin SiON Buffer Layer
Published: 3/1/2004
Authors: Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A Richter, Da-Wei Heh, John S Suehle
Abstract: The variable rise/fall-time charge pumping technique has been used to determine the energy distribution of interface trap density (Dit) in MOSFETs with HfO2 gate dielectric grown on ultra-thin (1-2 monolayer) SiON buffer layer on Si. Our results have ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31451

133. Comparative Thickness Measurements of SiO^d2^/Si Films for Thickness Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J R. Swider, G Cappello, Curt A Richter
Abstract: We report on a comparative measurement of SiO^d2^/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831275

134. Comparative Thickness Measurements of SiO^d2^/Si Films for Thicknesses Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J Swider, G Cappello, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31662

135. Molecular Devices formed by Direct Monolayer Attachment to Silicon
Published: 12/10/2003
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter
Abstract: We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si<111> surfaces formed to pursue the electrical properties of organic monolayers and as a first step towards creating hybrid sili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31550

136. Electrical Characterization of Molecular Monolayers Formed by Direct Attachment to Si
Published: 12/4/2003
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter
Abstract: We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si<111> surfaces formed to pursue the electrical properties of organic monolayers. Direct attachment of organic molecules to the s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31542

137. Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance-Voltage and HRTEM Measurements
Published: 9/30/2003
Authors: James R. Ehrstein, Curt A Richter, Deane Chandler-Horowitz, Eric M. Vogel, Donnie R. Ricks, Chadwin Young, Steve Spencer, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold, Pui-Yee Hung
Abstract: We have completed a comparison of SiO2 film thicknesses obtained with the three dominant measurement techniques used in the IC industry . This work is directed at evaluating metrology capability that might support NIST- traceable Reference Materials ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31352

138. Energy Distribution of Interface Traps in High-K Gated MOSFETs
Published: 6/1/2003
Authors: Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A Richter, Da-Wei Heh, John S Suehle
Abstract: We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30930

139. Metrology for Molecular Electronics
Published: 3/31/2003
Authors: Curt A Richter, D R. Stewart
Abstract: We discuss some of the complex issues associated with the metrology of molecular electronic devices and describe an electrical characterization method to assess molecular crossbar devices. Experimental data is shown for an eicosanoic acid crossbar de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30926

140. A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published: 3/10/2003
Authors: Eric M. Vogel, Curt A Richter, Brian G. Rennex
Abstract: We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17822



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series