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Author: curt richter

Displaying records 131 to 140 of 166 records.
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131. Molecular Devices formed by Direct Monolayer Attachment to Silicon
Published: 12/10/2003
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter
Abstract: We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si<111> surfaces formed to pursue the electrical properties of organic monolayers and as a first step towards creating hybrid sili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31550

132. Electrical Characterization of Molecular Monolayers Formed by Direct Attachment to Si
Published: 12/4/2003
Authors: Curt A Richter, Christina Ann Hacker, Lee J Richter
Abstract: We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si<111> surfaces formed to pursue the electrical properties of organic monolayers. Direct attachment of organic molecules to the s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31542

133. Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance-Voltage and HRTEM Measurements
Published: 9/30/2003
Authors: James R. Ehrstein, Curt A Richter, Deane Chandler-Horowitz, Eric M. Vogel, Donnie R. Ricks, Chadwin Young, Steve Spencer, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold, Pui-Yee Hung
Abstract: We have completed a comparison of SiO2 film thicknesses obtained with the three dominant measurement techniques used in the IC industry . This work is directed at evaluating metrology capability that might support NIST- traceable Reference Materials ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31352

134. Energy Distribution of Interface Traps in High-K Gated MOSFETs
Published: 6/1/2003
Authors: Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A Richter, Da-Wei Heh, John S Suehle
Abstract: We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30930

135. Metrology for Molecular Electronics
Published: 3/31/2003
Authors: Curt A Richter, D R. Stewart
Abstract: We discuss some of the complex issues associated with the metrology of molecular electronic devices and describe an electrical characterization method to assess molecular crossbar devices. Experimental data is shown for an eicosanoic acid crossbar de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30926

136. A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published: 3/10/2003
Authors: Eric M. Vogel, Curt A Richter, Brian G. Rennex
Abstract: We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=17822

137. Molecular Electronic Test Structures
Published: 3/1/2002
Authors: Curt A Richter, John S Suehle, Monica D Edelstein, Oleg A Kirillov, Roger D van Zee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30756

138. Spectroscopic Ellipsometry Characterization of High-K Dielectric HfO^d2^ Thin Films and the High-Temperature Annealing on Their Optical Properties
Published: 2/18/2002
Authors: Yong J. Cho, Nhan V Nguyen, Curt A Richter, James R. Ehrstein, Byoung H. Lee, Jack C. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8355

139. Differences Between Quantum-Mechanical Capacitance-Voltage Simulators
Published: 9/7/2001
Authors: Curt A Richter, Eric M. Vogel, Angela Hodge, Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13625

140. Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices
Published: 5/13/2001
Authors: John S Suehle, Eric M. Vogel, Monica D Edelstein, Curt A Richter, Nhan V Nguyen, Igor Levin, Debra L Kaiser, Hanchang F Wu, J B Bernstein
Abstract: As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30236



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