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Author: ndubuisi orji

Displaying records 51 to 56.
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51. Subnanometer Wavelength Metrology of Lithographically Prepared structures: A Comparison of Neutron and X-Ray Scattering
Published: 5/1/2003
Authors: D Casa, R Jones, Theodore Vincent Vorburger, Ndubuisi George Orji, G Barclay, P Bolton, W Wu, E Lin, T Hu
Abstract: The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We prov ...

52. Scale-Space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures
Published: 1/1/2003
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Xiaohong Gu, Jayaraman Raja
Abstract: Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Tech ...

53. Surface Finish and Sub-Surface Metrology
Published: 1/1/2003
Authors: Theodore Vincent Vorburger, Ndubuisi George Orji, Li Piin Sung, T Rodriguez
Abstract: Surface finsih affects the performance of a wide variety of manufactured products ranging from road surfaces and ships to mechanical parts, microelectronics, and optics. Accordingly roughness values can vary over many orders of magnitude. A variety o ...

54. Surface Metrology Software Variability in Two-Dimensional Measurements
Published: 1/1/2003
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Xiaohong Gu, Jayaraman Raja
Abstract: A range of surface texture measurement instruments is available in the market place. Most of the measurement instruments are microcomputer-based systems that contain their own surface analysis software to evaluate measured roughness profiles. After a ...

55. Silicon Single Atom Steps as AFM Height Standards
Published: 8/1/2001
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, V W. Tsai, E. C. Williams, Theodore Vincent Vorburger, H Edwards, D Cook, P West, R Nyffenegger
Abstract: Atomic force microscopes (AFMs) are used in the semiconductor industry for a variety of metrology purposes. Step height measurements at the nanometer level and roughness measurements at sub-nanometer levels are often of interest. To perform accurate ...

56. Atomic Level Surface Metrology
Published: 1/1/2001
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Jun-Feng Song, Thomas B Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger
Abstract: MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness ~ 0.1 nmSilicon gate oxides with thickness ~ 3 nm,rms roughness must be sign ...

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