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You searched on: Author: ndubuisi orji

Displaying records 51 to 60 of 64 records.
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51. Line Edge Roughness Metrology Using Atomic Force Microscopes
Published: 1/1/2005
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Joseph Fu, Ronald G Dixson, C Nguyen, Jayaraman Raja
Abstract: Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823182

52. Linewidth Measurement from a Stitched AFM Image
Published: 1/1/2005
Authors: Joseph Fu, Ronald G Dixson, Ndubuisi George Orji, Theodore Vincent Vorburger, C Nguyen
Abstract: Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot.  It has been widely used in photography, medical imaging, and computer vision and graphics. &n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823186

53. Traceable Pico-Meter Level Step Height Metrology
Published: 12/1/2004
Authors: Ndubuisi George Orji, Ronald G Dixson, Joseph Fu, Theodore Vincent Vorburger
Abstract: The atomic force microscope (AFM) increasingly being used as a metrology tool in the semiconductor industry where the features measured are at the nanometer level and continue to decrease. Usually the height sensors of the AFM are calibrated using st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822142

54. Determination of Optimal Parameters for CD-SEM Measurement of Line Edge Roughness
Published: 5/1/2004
Authors: B Bunday, M R Bishop, D Mccormack, John S Villarrubia, Andras Vladar, Theodore Vincent Vorburger, Ndubuisi George Orji, J Allgair
Abstract: The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822538

55. AFM Characterization of Semiconductor Line Edge Roughness, Edited by B. Bhushan, H. Fuchs, and S. Hosaka
Published: 3/5/2004
Authors: Ndubuisi George Orji, M. Sanchez, Jayaraman Raja, Theodore Vincent Vorburger
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902000

56. Space-Scale Analysis of Line Edge Roughness on 193 nm Lithography Test Structures
Published: 10/1/2003
Authors: Ndubuisi George Orji, Jayaraman Raja, Theodore Vincent Vorburger, Xiaohong Gu
Abstract: Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Te ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823166

57. Influence of analysis Algorithms on the Value of Distorted Step Height Data
Published: 9/1/2003
Authors: Ndubuisi George Orji, Jayaraman Raja, Son H. Bui, Theodore Vincent Vorburger
Abstract: One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being analyzed are ideal, but real step profiles are not ideal and the analysis algorithms can influenc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822145

58. Sub-Nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-Ray Scattering
Published: 6/1/2003
Authors: Ronald Leland Jones, T Hu, Eric K Lin, Wen-Li Wu, D M Casa, Ndubuisi George Orji, Theodore Vincent Vorburger, P J Bolton, G G Barclay
Abstract: The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We pro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852192

59. Subnanometer Wavelength Metrology of Lithographically Prepared structures: A Comparison of Neutron and X-Ray Scattering
Published: 5/1/2003
Authors: D Casa, R Jones, Theodore Vincent Vorburger, Ndubuisi George Orji, G Barclay, P Bolton, W Wu, E Lin, T Hu
Abstract: The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We prov ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822042

60. Scale-Space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures
Published: 1/1/2003
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Xiaohong Gu, Jayaraman Raja
Abstract: Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Tech ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822124



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