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Author: nhan nguyen

Displaying records 31 to 40 of 73 records.
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31. Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
Published: 11/17/2005
Authors: Nhan V Nguyen, Martin M Frank, Albert Davydov, Deane Chandler-Horowitz
Abstract: The crystallinity of atomic layer deposition hafnium oxide was found to be thickness-dependent with the thinnest films being amorphous and thick films being at least partially crystalline. Similar films fabricated by metalorganic chemical vapor depos ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32024

32. Atomic Layer Deposition - Process Models and Metrologies
Published: 9/30/2005
Authors: D R. Burgess, J. E Maslar, W S. Hurst, E F. Moore, W A. Kimes, R R. Fink, Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32496

33. The Relation between Crystalline Phase, Electronic Structure and Dielectric Properties in High-K Gate Stacks
Published: 9/28/2005
Authors: Safak Sayan, Mark Croft, Nhan V Nguyen, Tom Emge, James R. Ehrstein, Igor Levin, John S Suehle, Robert A Bartynski, Eric Garfunkel
Abstract: As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic, and dielectric properties are being rigorously examined. The valence and conduc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32018

34. Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties
Published: 9/1/2005
Authors: Safak Sayan, Mark Croft, Nhan V Nguyen, Tom Emge, Evgeni Gusev, Hyunjung Grace Kim, James R. Ehrstein, Paul McIntyre, Eric Garfunkel
Abstract: As medium-high permittivity dielectrics approach use in MOSFET production, an atomic level understanding of their permittivity and the capacitance of structures made from them are being rigorously examined. In this note, the issue of crystal structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31646

35. Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy
Published: 5/9/2005
Authors: Nhan V Nguyen, James E Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
Abstract: The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric functi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31754

36. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Published: 4/1/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, Xinjian Zhou, David V Vanderbilt, Igor Levin, Evgeni Gusev, Hyunjung Grace Kim, P J. McIntyre
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31990

37. Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy
Published: 10/4/2004
Authors: Nhan V Nguyen, James E Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
Abstract: The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structura ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31511

38. Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study
Published: 10/1/2004
Authors: M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan V Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph A. Dura
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31994

39. Comparative Thickness Measurements of SiO^d2^/Si Films for Thickness Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J R. Swider, G Cappello, Curt A Richter
Abstract: We report on a comparative measurement of SiO^d2^/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831275

40. Comparative Thickness Measurements of SiO^d2^/Si Films for Thicknesses Less than 10 nm
Published: 1/1/2004
Authors: Terrence J Jach, Joseph A. Dura, Nhan V Nguyen, J Swider, G Cappello, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31662



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