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You searched on: Author: nhan nguyen

Displaying records 21 to 30 of 78 records.
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21. Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
Published: 8/27/2008
Authors: Nhan V Nguyen, Oleg A Kirillov, Weirong Jiang, Wenyong Wang, John S Suehle, P. D Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
Abstract: In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry.  The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, whi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32993

22. Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure
Published: 5/23/2008
Author: Nhan V Nguyen
Abstract: Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties at solid-solid interfaces.  Upon photon excitation, electrons or/and holes in the solid under an external electrical bias, accumulate at th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32964

23. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32958

24. Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.
Published: 3/6/2008
Authors: Nhan V Nguyen, Hao Xiong, John S Suehle, Oleg A Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Abstract: Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32733

25. High Sensitivity Attenuated Total Reflection Fourier Transform Infrared Spectroscopy Study of Ultrathin ZrO2 Films: A Study of Phase Change
Published: 3/3/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32977

26. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32303

27. In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition
Published: 1/1/2008
Authors: James E Maslar, Wilbur Scott Hurst, Donald R Burgess Jr., William Andrew Kimes, Nhan V Nguyen, Elizabeth F Moore, Joseph Terence Hodges
Abstract: Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications.  In situ monitoring of ALD processes has the potential to yield insight ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832216

28. Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces
Published: 9/30/2007
Authors: Nhan V Nguyen, Oleg A Kirillov, Hao Xiong, John S Suehle
Abstract: Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32724

29. In Situ Characterization of Gas-Phase Species Present During Hafnium Oxide Atomic Layer Deposition
Published: 1/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, Donald R Burgess Jr., William Andrew Kimes, Nhan V Nguyen
Abstract: In this work, the species present in the gas phase during atomic layer deposition of hafnium oxide were investigated in an attempt to gain insight into the chemistry of this system. Hafnium oxide was deposited on a silicon substrate using tetrakis(e ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830716

30. Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM
Published: 11/1/2006
Authors: Hao Xiong, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, whic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32431



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