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Author: nhan nguyen

Displaying records 21 to 30 of 72 records.
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21. In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition
Published: 1/1/2008
Authors: James E Maslar, Wilbur S. Hurst, Donald R Burgess Jr, William Andrew Kimes, Nhan V Nguyen, Elizabeth F Moore, Joseph Terence Hodges
Abstract: Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications.  In situ monitoring of ALD processes has the potential to yield insight ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832216

22. Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces
Published: 9/30/2007
Authors: Nhan V Nguyen, Oleg A Kirillov, Hao Xiong, John S Suehle
Abstract: Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32724

23. In Situ Characterization of Gas-Phase Species Present During Hafnium Oxide Atomic Layer Deposition
Published: 1/1/2007
Authors: James E Maslar, Wilbur S. Hurst, Donald R Burgess Jr, William Andrew Kimes, Nhan V Nguyen
Abstract: In this work, the species present in the gas phase during atomic layer deposition of hafnium oxide were investigated in an attempt to gain insight into the chemistry of this system. Hafnium oxide was deposited on a silicon substrate using tetrakis(e ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830716

24. Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM
Published: 11/1/2006
Authors: Hao Xiong, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, whic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32431

25. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

26. Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Published: 11/22/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, James J Chambers, Mark R Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and cond ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32000

27. Compositional Stability of Hafnium Aluminates Thin Films Deposited on Si by Atomic Layer Deposition
Published: 11/17/2005
Authors: C. Driemeier, K P. Bastos, L Miotti, I.J.R. Baumvol, Nhan V Nguyen, Safak Sayan, C Krug
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32147

28. Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition
Published: 11/17/2005
Authors: Nhan V Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Abstract: Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Elec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31774

29. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

30. Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
Published: 11/17/2005
Authors: Nhan V Nguyen, Martin M Frank, Albert Davydov, Deane Chandler-Horowitz
Abstract: The crystallinity of atomic layer deposition hafnium oxide was found to be thickness-dependent with the thinnest films being amorphous and thick films being at least partially crystalline. Similar films fabricated by metalorganic chemical vapor depos ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32024



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