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You searched on: Author: nhan nguyen

Displaying records 11 to 20 of 78 records.
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11. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Published: 3/6/2012
Authors: Qin Q. Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

12. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

13. Investigation of SiO2/HfO2 stacks for flash memory applications
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

14. Photoemission Threshold Spectroscopy: MOS Band alignments
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

15. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 12/10/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
Abstract: In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907189

16. Airless Solar System Bodies: Improvements to Radiative Transfer Modeling of Reflectance Spectra
Published: 11/2/2010
Author: Nhan V Nguyen
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908442

17. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105

18. Visible and near-infrared reflectance spectrometry of Fe for lunar surface composition study
Published: 3/31/2010
Authors: David Blewett, Nhan V Nguyen, Oleg A Kirillov, Samuel Lawrence
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907162

19. Iron Optical Constants and Reflectance Spectroscopy of Planetary Surfacers
Published: 3/1/2010
Authors: David Blewett, Nhan V Nguyen, Oleg A Kirillov, Samuel Lawrence
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907161

20. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535



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