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Author: nhan nguyen

Displaying records 11 to 20 of 72 records.
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11. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105

12. Visible and near-infrared reflectance spectrometry of Fe for lunar surface composition study
Published: 3/31/2010
Authors: David Blewett, Nhan V Nguyen, Oleg A Kirillov, Samuel Lawrence
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907162

13. Iron Optical Constants and Reflectance Spectroscopy of Planetary Surfacers
Published: 3/1/2010
Authors: David Blewett, Nhan V Nguyen, Oleg A Kirillov, Samuel Lawrence
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907161

14. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

15. Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
Published: 8/27/2008
Authors: Nhan V Nguyen, Oleg A Kirillov, Weirong Jiang, Wenyong Wang, John S Suehle, P. D Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
Abstract: In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry.  The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, whi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32993

16. Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure
Published: 5/23/2008
Author: Nhan V Nguyen
Abstract: Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties at solid-solid interfaces.  Upon photon excitation, electrons or/and holes in the solid under an external electrical bias, accumulate at th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32964

17. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32958

18. Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.
Published: 3/6/2008
Authors: Nhan V Nguyen, Hao Xiong, John S Suehle, Oleg A Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Abstract: Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32733

19. High Sensitivity Attenuated Total Reflection Fourier Transform Infrared Spectroscopy Study of Ultrathin ZrO2 Films: A Study of Phase Change
Published: 3/3/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32977

20. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32303



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