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You searched on: Author: allen hefner jr

Displaying records 111 to 120 of 146 records.
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111. Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions
Published: 10/5/1999
Authors: B M. Song, Huibin Zhu, Jih-Sheng Lai, Allen R Hefner Jr.
Abstract: In this paper, switching characteristics of non-punch through (NPT) and punch through (PT) Insulated Gate Bipolar Transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30165

112. Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device
Published: 10/3/1999
Authors: Jih-Sheng Lai, David Warren Berning, Allen R Hefner Jr., Chien-Chung Shen, B M. Song, R Zhou
Abstract: A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30163

113. Modeling Based Examination of Conducted EMI Emissions from Hard- and Soft-Switching PWM Inverters
Published: 10/3/1999
Authors: Huibin Zhu, Jih-Sheng Lai, Yi-hua Tang, Allen R Hefner Jr., Celia Chen
Abstract: For the purpose of investigation of electromagnetic interference (EMI) mechanisms in hard- and soft-switching PWM inverters, empirical models and comparative experiments were studied in both time-domain and frequency-domain. Models of the major circ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30162

114. Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry
Published: 7/1/1999
Authors: Huibin Zhu, Allen R Hefner Jr., Jih-Sheng Lai
Abstract: The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a tim ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11233

115. Analysis of Conducted EMI Emissions from PWM Inverters Based on Empirical Models and Comparative Experiments
Published: 6/1/1999
Authors: Huibin Zhu, Jih-Sheng Lai, Yi-hua Tang, Allen R Hefner Jr., Celia Chen
Abstract: For the purpose of investigation of electromagnetic interference (EMI) mechanisms in PWM inverters, empirical models and comparative experiments were studied in both time and frequency domains.  Models of major circuit components including switc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13691

116. Accurate Modeling and Analysis of PWM Inverters for Electromagnetic Compatibility Performance Evaluation
Published: 12/31/1998
Authors: Huibin Zhu, Yi-hua Tang, Jih-Sheng Lai, Allen R Hefner Jr.
Abstract: For the purpose of electromagnetic compatibility (EMC) performance investigation and prediction, accurate modeling and analysis are performed on IGBT PWM inverters. In this paper, parasitic components and their measurement methods are addressed. Mo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8500

117. Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry
Published: 12/31/1998
Authors: Huibin Zhu, Allen R Hefner Jr., Jih-Sheng Lai
Abstract: The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a tim ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10048

118. Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions
Published: 12/31/1998
Authors: Chien-Chung Shen, Allen R Hefner Jr., David Warren Berning, J B Bernstein
Abstract: The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements.  The UIS measurements are made using a unique, automated nondestruct ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3393

119. IGBT Model Validation
Published: 12/1/1998
Authors: David Warren Berning, Allen R Hefner Jr.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10820

120. Electrothermal Simulation of an IGBT PWM Inverter
Published: 5/1/1997
Authors: Alan Mantooth, Allen R Hefner Jr.
Abstract: A recently developed electrothermal network simulation methodoogy is used to analyze the behavior of a full-bridge, pulse-width modulated (PWM), voltage-source inverter, which uses insulated gate bipolar transistors (IGBT's) as the switching devi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6484



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