NIST logo

Publications Portal

You searched on:
Author: allen hefner jr

Displaying records 111 to 120 of 144 records.
Resort by: Date / Title


111. Modeling Based Examination of Conducted EMI Emissions from Hard- and Soft-Switching PWM Inverters
Published: 10/3/1999
Authors: Huibin Zhu, Jih-Sheng Lai, Yi-hua Tang, Allen R Hefner Jr, Celia Chen
Abstract: For the purpose of investigation of electromagnetic interference (EMI) mechanisms in hard- and soft-switching PWM inverters, empirical models and comparative experiments were studied in both time-domain and frequency-domain. Models of the major circ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30162

112. Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry
Published: 7/1/1999
Authors: Huibin Zhu, Allen R Hefner Jr, Jih-Sheng Lai
Abstract: The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a tim ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=11233

113. Analysis of Conducted EMI Emissions from PWM Inverters Based on Empirical Models and Comparative Experiments
Published: 6/1/1999
Authors: Huibin Zhu, Jih-Sheng Lai, Yi-hua Tang, Allen R Hefner Jr, Celia Chen
Abstract: For the purpose of investigation of electromagnetic interference (EMI) mechanisms in PWM inverters, empirical models and comparative experiments were studied in both time and frequency domains.  Models of major circuit components including switc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=13691

114. Accurate Modeling and Analysis of PWM Inverters for Electromagnetic Compatibility Performance Evaluation
Published: 12/31/1998
Authors: Huibin Zhu, Yi-hua Tang, Jih-Sheng Lai, Allen R Hefner Jr
Abstract: For the purpose of electromagnetic compatibility (EMC) performance investigation and prediction, accurate modeling and analysis are performed on IGBT PWM inverters. In this paper, parasitic components and their measurement methods are addressed. Mo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=8500

115. Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry
Published: 12/31/1998
Authors: Huibin Zhu, Allen R Hefner Jr, Jih-Sheng Lai
Abstract: The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a tim ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10048

116. Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions
Published: 12/31/1998
Authors: Chien-Chung Shen, Allen R Hefner Jr, David W. Berning, J B Bernstein
Abstract: The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements.  The UIS measurements are made using a unique, automated nondestruct ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=3393

117. IGBT Model Validation
Published: 12/1/1998
Authors: David W. Berning, Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10820

118. Electrothermal Simulation of an IGBT PWM Inverter
Published: 5/1/1997
Authors: Alan Mantooth, Allen R Hefner Jr
Abstract: A recently developed electrothermal network simulation methodoogy is used to analyze the behavior of a full-bridge, pulse-width modulated (PWM), voltage-source inverter, which uses insulated gate bipolar transistors (IGBT's) as the switching devi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6484

119. IGBT Half-Bridge Shoot-Through Characterization for Model Validation
Published: 12/31/1996
Authors: David W. Berning, Allen R Hefner Jr
Abstract: A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25158

120. Modeling Buffer Layer IGBTs for Circuit Simulation
Published: 3/1/1995
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=22740



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series