NIST logo

Publications Portal

You searched on:
Author: william guthrie

Displaying records 21 to 30 of 76 records.
Resort by: Date / Title


21. Nano- and Atomic-Scale Length Metrology
Published: 1/1/2006
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C Feng, Michael W Cresswell, Richard A Allen, William F Guthrie, Wei Chu
Abstract: We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823216

22. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

23. Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty
Published: 5/30/2005
Authors: Michael W Cresswell, Ronald G Dixson, William F Guthrie, Richard A Allen, Christine E. Murabito, Brandon Park, Joaquin (Jack) Martinez, Amy Hunt
Abstract: The implementation of a new type of HRTEM-imaging (High-Resolution Transmission Electron Microscopy) test structure, and the use of CD-AFM (CD-Atomic Force Microscopy) to serve as the transfer metrology have resulted in reductions in the uncertaintie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31923

24. Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm
Published: 4/18/2005
Authors: Michael W Cresswell, Brandon Park, Richard A Allen, William F Guthrie, Ronald G Dixson, Wei Tan, Christine E. Murabito
Abstract: CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to faci ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31907

25. Extraction of Critical Dimension Reference Feature CDs from New Test Structure Using HRTEM Imaging
Published: 4/18/2005
Authors: Richard A Allen, Amy Hunt, Christine E. Murabito, Brandon Park, William F Guthrie, Michael W Cresswell
Abstract: NIST has an ongoing effort to provide the semiconductor industry with critical dimension CD reference materials, using the silicon (111) lattice spacing as a reference to establish the linewidth. Recent developments include both a new test structure ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31924

26. Comparison of SEM and HRTEM CD-Measurements Extracted From Monocrystalline Tes-Structures Having Feature Linewidths From 40 nm to 240 nm
Published: 4/4/2005
Authors: W Tan, Robert Allen, Michael W Cresswell, Christine E. Murabito, B C. Park, Ronald G Dixson, William F Guthrie
Abstract: CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to faci ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822390

27. Report of Investigation of RM 8111: Single-Crystal Critical Dimension Prototype Reference Materials
Published: 3/2/2005
Authors: Michael W Cresswell, Richard A Allen, Ronald G Dixson, William F Guthrie, Christine E. Murabito, Brandon Park, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31868

28. Troubleshooting Key Comparisons (A Survey of Design, Analysis, and Reporting of Results in Key Comparisons)
Published: 3/1/2005
Authors: Adriana Hornikova, William F Guthrie
Abstract: Key comparisons are international interlaboratory studies used to establish the degree of equivalence between national measurement standards. These studies, carried out by National Metrology Institutes, aer time-consuming, but necessary to facilitate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=151798

29. CD-AFM Reference Metrology at NIST and SEMATECH
Published: 2/27/2005
Authors: Ronald G Dixson, Jing Fu, Ndubuisi G Orji, William F Guthrie, Richard A Allen, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32108

30. A Survey of Key Comparisons
Published: 1/1/2005
Authors: Adriana Hornikova, William F Guthrie
Abstract: Key Comparisons are international inter-laboratory studies used to establish the degree of equivalence between national measurement standards. These studies, carried out by National Metrology Institutes, are time-consuming, but necessary to facilita ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=150364



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series