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You searched on: Author: roy geiss

Displaying records 21 to 30 of 51 records.
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21. Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
Published: 4/1/2009
Authors: Roy H. Geiss, David Thomas Read
Abstract: GaN nanowires with InGaN quantum wells (QW) were grown on heated Si(111) substrates by molecular beam epitaxy (MBE) using elemental Ga and In and a radio-frequency-plasma N2 source. The growth procedures and the morphology of these nanowires have bee ...

22. Micrometer-width damascene copper conductors at e10 MA/cm2
Published: 1/1/2009
Authors: David Thomas Read, Roy H. Geiss
Abstract: We have applied high amplitude (~10 MA/cm2) alternating current (AC) at 100 Hz and direct current (DC) to copper interconnect lines with widths in the few-micrometer range covered with a thick layer of SiO2. Under our test conditions of Joule heating ...

23. Thermal Cycling of Buried Damascene Copper Interconnect Lines by Joule Heating
Published: 1/1/2008
Authors: David Thomas Read, Roy H. Geiss
Abstract: We report tests to failure of 300 nm wide damascene copper interconnect lines in silicon oxide dielectric, under high amplitude, low frequency alternating current. The cyclic minimum and maximum resistances were obtained from the measured voltage and ...

24. Constraint Effect in Deformation of Copper Interconnect Lines Subjected to Cyclic Joule Heating
Published: 11/26/2007
Authors: David Thomas Read, Roy H. Geiss, Nicholas Barbosa
Abstract: Using finite element analysis, we calculate the temperature range and the resulting cyclic Von Mises strain resulting from Joule heating, generated by the application of alternating current, applied to specimens representative of commercial copper da ...

25. Defect behavior in aluminum interconnect lines deformed thermomechanically by cyclic joule heating
Published: 11/26/2007
Authors: Roy H. Geiss, David Thomas Read
Abstract: Transmission electron microscopy (TEM) was used to study the defects introduced into PVD Al-1wt% Si lines on SiO2/Si substrates that were deformed thermomechanically by cyclic Joule heating induced by AC current. SEM observations revealed striking ar ...

26. An Electrical Method for Measuring Fatigue and Tensile Properties of Thin Films on Substrates
Published: 8/15/2007
Authors: Robert R Keller, Nicholas Barbosa, Roy H. Geiss, David Thomas Read
Abstract: A novel approach for measuring thermal fatigue lifetime and ultimate strength of patterned thin films on substrates is presented. The method is based on controlled application of cyclic joule heating by means of low-frequency, high-density alternatin ...

27. Microstructure of 100 nm damascene copper overburden and lines studied by electron backscatter diffraction
Published: 8/6/2007
Authors: Roy H. Geiss, David Thomas Read
Abstract: A detailed understanding of the crystallography of metallic conductors in modern interconnect systems is essential if we are to understand the influence of processing parameters on performance and reliability. In particular we must be able to evaluat ...

Published: 7/1/2007
Authors: Stephanie A Hooker, Roy H. Geiss, Aparna Kar
Abstract: Carbon nanotubes have unique properties of interest for applications in aerospace, electronics, and biotechnology. However, the properties of different batches of carbon nanotubes can vary considerably depending on chemical purity and the nanotube ty ...

29. High Amplitude AC Tests of 300-nm Damascene Interconnect Structures
Published: 4/1/2007
Authors: David Thomas Read, Roy H. Geiss, Glenn Alers
Abstract: The AC fatigue test technique, which uses cyclic joule heating to apply thermal cycles to thin-film structures, was applied to copper lines and vias in damascene dielectric structures on silicon substrates. Specimen chips with two different types of ...

30. Need for Standardization of EBSD Measurements for Microstructural Characterization of Thin Film Structures
Published: 3/5/2007
Authors: Roy H. Geiss, David Thomas Read
Abstract: Microstructural characterization of metal thin films includes measurement of grain size, crystallographic texture and misorientation angle across grain boundaries. All of these measurements can be made simultaneously by the use of electron backscatte ...

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