NIST logo

Publications Portal

You searched on: Author: roy geiss

Displaying records 11 to 20 of 50 records.
Resort by: Date / Title

11. Argon ion beam alters grain structure of copper in surface preparation for EBSD
Published: 8/1/2010
Authors: Roy H. Geiss, David Thomas Read
Abstract: In preparing specimens of thin films of copper for examination by electron backscatter diffraction (EBSD), surface preparation is often necessary to produce acceptable EBSD patterns. Typically, removal of a rough, damaged or oxidized layer of the sur ...

12. Methods for TEM analysis of NIST‰s SWCNT SRM
Published: 3/25/2010
Authors: Roy H. Geiss, Elisabeth Mansfield, Jeffrey A Fagan
Abstract: The National Institute of Standards and Technology (NIST) is developing a series of single-walled carbon nanotube, SWCNT, reference materials, RMs, to provide researchers with well characterized materials for their applications. The SWCNT reference m ...

13. Resistivity Dominated by Surface Scattering in Sub-50 nm Cu Wires
Published: 1/25/2010
Authors: Rebekah L. Graham, Glenn Alers, Thomas Mountsier, N. Shamma, S. Dhuey, R. H. Cabrini, Roy H. Geiss, David Thomas Read, S. Peddeti
Abstract: The electron scattering mechanisms in sub-50nm copper lines were investigated to understand the extendibility of copper interconnects when the line width or thickness is less than the mean free path. Electron-beam lithography and a dual hardmask a ...

14. Elastic constants and dimensions of imprinted polymeric nanolines determined from Brillouin light scattering
Published: 1/18/2010
Authors: Ward L Johnson, Sudook A. Kim, Roy H. Geiss, Colm Flannery, Paul R Heyliger, Christopher L Soles, Wen-Li Wu, Chengqing C. Wang, Christopher M Stafford, B D. Vogt
Abstract: Elastic constants and cross-sectional dimensions of imprinted nanolines of poly(methyl methacrylate) (PMMA) on silicon are determined nondestructively from finite-element inversion analysis of dispersion curves of hypersonic acoustic modes of these ...

15. Transmission Electron Diffraction from nanoparticles, nanowires and thin films in an SEM using conventional EBSD equipment
Published: 1/1/2010
Authors: Roy H. Geiss, Robert R Keller, David Thomas Read
Abstract: We describe a new scanning electron microscope (SEM) method for obtaining and analyzing the crystallographic structure and orientation in nanoparticles and ultrathin films using conventional electron backscatter diffraction (EBSD) equipment.

16. Effect of microstructure on magnetic properties and anisotropy distributions in Co/Pd thin films and nanostructures
Published: 11/19/2009
Authors: Justin M Shaw, Hans Toya Nembach, Thomas J Silva, Stephen E Russek, Roy H. Geiss
Abstract: The structure of Co/Pd multilayers has a strong effect on the localized anisotropy distribution within a film and the resulting switching properties of nanostructures fabricated from identical material. By varying the underlying seed layer, the micr ...

17. Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films
Published: 10/13/2009
Authors: Ryan Paul Birringer, Roey Shaviv, Thomas Mountsier, Jon Reid, Jian Zhou, Roy H. Geiss, David Thomas Read, Reinhold Dauskardt
Abstract: Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu p ...

18. Methods for TEM analysis of NIST s single-walled carbon nanotube Standard Reference Material
Published: 8/20/2009
Authors: Elisabeth Mansfield, Roy H. Geiss, Jeffrey A Fagan
Abstract: The National Institute of Standards and Technology (NIST) is releasing a series of single-walled carbon nanotube Standard Reference Materials (SRMs) to provide consumers with a well-characterized material for their applications. The SWCNT Reference ...

19. EBSD Analysis of Narrow Damascene Copper Lines
Published: 5/11/2009
Authors: Roy H. Geiss, David Thomas Read, Glenn Alers, Rebekah L. Graham
Abstract: Orientation imaging microscopy (OIM) by electron back scatter diffraction (EBSD) has been used to examine grain size and crystallographic orientations of damascene Cu lines nominally 25 nm to 55 nm in width and 100 nm thick. These are the smallest st ...

20. Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
Published: 4/1/2009
Authors: Roy H. Geiss, David Thomas Read
Abstract: GaN nanowires with InGaN quantum wells (QW) were grown on heated Si(111) substrates by molecular beam epitaxy (MBE) using elemental Ga and In and a radio-frequency-plasma N2 source. The growth procedures and the morphology of these nanowires have bee ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series