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You searched on: Author: ronald dixson

Displaying records 71 to 80 of 124 records.
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71. Traceable Atomic Force Microscope Dimensional Metrology at NIST
Published: 3/1/2006
Authors: Ronald G Dixson, Ndubuisi George Orji, Joseph Fu, Michael W. Cresswell, Richard A Allen, William F Guthrie
Abstract: The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology.  There are two major instruments being used for traceable measurements at NIST.  The first is a cus ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823204

72. Nano- and Atomic-Scale Length Metrology
Published: 1/1/2006
Authors: Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C Feng, Michael W. Cresswell, Richard A Allen, William F Guthrie, Wei Chu
Abstract: We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823216

73. Traceable Calibration of Critical-Dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W. Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

74. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calib Standards With a Calibrated AFM at NIST
Published: 9/29/2005
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, Edwin Ross Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820918

75. Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty
Published: 5/30/2005
Authors: Michael W. Cresswell, Ronald G Dixson, William F Guthrie, Richard A Allen, Christine E. Murabito, Brandon Park, Joaquin (Jack) Martinez, Amy Hunt
Abstract: The implementation of a new type of HRTEM-imaging (High-Resolution Transmission Electron Microscopy) test structure, and the use of CD-AFM (CD-Atomic Force Microscopy) to serve as the transfer metrology have resulted in reductions in the uncertaintie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31923

76. Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm
Published: 4/18/2005
Authors: Michael W. Cresswell, Brandon Park, Richard A Allen, William F Guthrie, Ronald G Dixson, Wei Tan, Christine E. Murabito
Abstract: CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to faci ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31907

77. Comparison of SEM and HRTEM CD-Measurements Extracted From Monocrystalline Tes-Structures Having Feature Linewidths From 40 nm to 240 nm
Published: 4/4/2005
Authors: W Tan, Robert Allen, Michael W. Cresswell, Christine E. Murabito, B C. Park, Ronald G Dixson, William F Guthrie
Abstract: CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to faci ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822390

78. Report of Investigation of RM 8111: Single-Crystal Critical Dimension Prototype Reference Materials
Published: 3/2/2005
Authors: Michael W. Cresswell, Richard A Allen, Ronald G Dixson, William F Guthrie, Christine E. Murabito, Brandon Park, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31868

79. CD-AFM Reference Metrology at NIST and SEMATECH
Published: 2/27/2005
Authors: Ronald G Dixson, Jing Fu, Ndubuisi G Orji, William F Guthrie, Richard A Allen, Michael W. Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32108

80. Dimensional Metrology with AFM
Published: 1/1/2005
Authors: T Mcwaid, J Schneir, Ronald G Dixson, V W. Tsai
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820749



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