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Author: ronald dixson

Displaying records 71 to 80 of 114 records.
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71. Line Edge Roughness Metrology Using Atomic Force Microscopes
Published: 1/1/2005
Authors: Ndubuisi George Orji, Theodore Vincent Vorburger, Joseph Fu, Ronald G Dixson, C V Nguyen, Jayaraman Raja
Abstract: Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823182

72. Linewidth Measurement from a Stitched AFM Image
Published: 1/1/2005
Authors: Joseph Fu, Ronald G Dixson, Ndubuisi George Orji, Theodore Vincent Vorburger, C V Nguyen
Abstract: Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot.  It has been widely used in photography, medical imaging, and computer vision and graphics. &n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823186

73. Reference Measurement System Using Critical Dimension Atomic Force Microscopy (CD-AFM): Final Report
Published: 1/1/2005
Author: Ronald G Dixson
Abstract: SEMATECH and the National Institute of Standards and Technology (NIST) have worked together to implement a Reference Measurement System (RMS) at SEMATECH using a critical-dimension atomic force microscope (CD-AFM). The basic goal of the collaboratio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823190

74. Traceable Calibration of Critical-Dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Published: 1/1/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
Abstract: The use of critical dimension atomic force microscopes (CD-AFMs) in semiconductor manufacturing, both for process control and as a reference metrology tool, is increasing.  If the tip width is calibrated consistentlybetween measurements, a CD-AF ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823193

75. Traceable Pico-Meter Level Step Height Metrology
Published: 12/1/2004
Authors: Ndubuisi George Orji, Ronald G Dixson, Joseph Fu, Theodore Vincent Vorburger
Abstract: The atomic force microscope (AFM) increasingly being used as a metrology tool in the semiconductor industry where the features measured are at the nanometer level and continue to decrease. Usually the height sensors of the AFM are calibrated using st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822142

76. Reference Metrology Using a Next Generation CD-AFM
Published: 5/24/2004
Authors: Ronald G Dixson, Angela Guerry
Abstract: International SEMATECH (ISMT and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of AFM dimensional metrology in semiconductor manufacturing. Due to the unique metrology requirements and the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822152

77. Interim Report on Single Crystal Critical Dimension Reference Materials (SCCDRM)
Published: 1/1/2004
Authors: Ronald G Dixson, Michael W Cresswell, Richard A Allen, William F Guthrie, Brandon Park, Christine E. Murabito, Joaquin (Jack) Martinez
Abstract: The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution.  The final technology transfer report is currently undergoing r ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822245

78. Critical Dimension Calibration Standards for ULSI Metrology
Published: 9/30/2003
Authors: Richard A Allen, Michael W Cresswell, Christine E. Murabito, Ronald G Dixson, E. Hal Bogardus
Abstract: NIST and International SEMATECH are developing single-crystal reference materials for use in evaluating and calibrating critical dimension (CD), that is linewidth, metrology tools. Primary calibration of these reference materials uses a high-resoluti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31314

79. Toward Traceability for At-line AFM Dimensional Metrology
Published: 7/1/2003
Authors: Marylyn H. Bennett, Angela Guerry, Ronald G Dixson, Michael T Postek, Theodore Vincent Vorburger
Abstract: The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, ho ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821740

80. Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage
Published: 5/1/2003
Authors: N. Sullivan, Ronald G Dixson, B Bunday, M Mastovich, P Knutruda, P Fabre, R Brandoma
Abstract: Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total critical dimension (CD) uncertainty of up to 10 nm can arise from line slimming through a combination of the line sl ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821976



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