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Author: kin cheung
Displaying records 51 to 52.
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51.
STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962
52.
THE FAST INITIAL THRESHOLD VOLTAGE SHIFT: NBTI OR HIGH-FIELD STRESS
Published: 4/27/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Recent 'NBTI' studies have come to involve very high electric fields, yet these same studies are used to criticize the lower field 'NBTI' models. This study examines both high- and low-field degradation phenomena by monitoring the initial threshold v
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http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32954