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Displaying records 51 to 60 of 73 records.
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51. On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published: 4/26/2010
Author: Kin P Cheung
Abstract: The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofs ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904995

52. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

53. Distributed Numerical Modeling of Low Temperature MOSFET Operation
Published: 12/9/2009
Authors: Akin Akturk, M. Holloway, David J Gundlach, S. Potbhare, B Li, Neil Goldsman, M Peckerar, Kin P Cheung
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907169

54. Demonstration of a Wafer-level Hall-Mobility Measurement Technique
Published: 12/3/2009
Authors: Liangchun (Liangchun) Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905433

55. A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Published: 10/21/2009
Authors: Liangchun (Liangchun) Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, Kuang Sheng
Abstract: Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905424

56. An Improved Fast I^d d ^-V ^d g Measurement Technology With Expanded Application Range
Published: 10/19/2009
Authors: Chen Wang, Liangchun (Liangchun) Yu, Jason P Campbell, Kin P Cheung, Yi Xuan, Peide Ye, John S Suehle, David Zhang
Abstract: Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this pape ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904155

57. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/16/2009
Authors: Liangchun (Liangchun) Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements over ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907098

58. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published: 10/14/2009
Authors: Liangchun (Liangchun) Yu, Kin P Cheung, Greg Dunne, Kevin Matocha, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907099

59. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/11/2009
Authors: Liangchun (Liangchun) Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

60. Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs
Published: 5/18/2009
Authors: Jason P Campbell, Liangchun (Liangchun) Yu, Kin P Cheung, Jin Qin, John S Suehle, A Oates, Kuang Sheng
Abstract: We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902184



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