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Author: kin cheung
Displaying records 51 to 52.
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51. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
52. THE FAST INITIAL THRESHOLD VOLTAGE SHIFT: NBTI OR HIGH-FIELD STRESS
Jason P Campbell, Kin P Cheung, John S Suehle
Recent 'NBTI' studies have come to involve very high electric fields, yet these same studies are used to criticize the lower field 'NBTI' models. This study examines both high- and low-field degradation phenomena by monitoring the initial threshold v ...