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Author: kin cheung

Displaying records 51 to 60 of 65 records.
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51. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/11/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

52. Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs
Published: 5/18/2009
Authors: Jason P Campbell, Liangchun Yu, Kin P Cheung, Jin Qin, John S Suehle, A Oates, Kuang Sheng
Abstract: We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902184

53. The Negative Bias Temperature Instability vs. High-Field Stress Paradigm
Published: 5/18/2009
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradatio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902213

54. Random Telegraph Noise in Highly Scaled nMOSFETs
Published: 4/26/2009
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901584

55. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900181

56. The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Published: 10/17/2008
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33210

57. The transient behavior of NBTI - A new prospective
Published: 10/17/2008
Authors: Kin P Cheung, Jason P Campbell
Abstract: The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33052

58. Oxide Reliability of SiC MOS Devices
Published: 10/12/2008
Authors: Liangchun Yu, Kin P Cheung, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900182

59. An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices
Published: 9/1/2008
Authors: Yun Wang, Kin P Cheung, Y.J. Choi, Byoung Hun Lee
Abstract: Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32746

60. New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Published: 9/1/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32968



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