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Author: kin cheung

Displaying records 51 to 60 of 61 records.
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51. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...

52. The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Published: 10/17/2008
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern ...

53. The transient behavior of NBTI - A new prospective
Published: 10/17/2008
Authors: Kin P Cheung, Jason P Campbell
Abstract: The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot to ...

54. Oxide Reliability of SiC MOS Devices
Published: 10/12/2008
Authors: Liangchun Yu, Kin P Cheung, Jason P Campbell, John S Suehle, Kuang Sheng
Abstract: Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefo ...

55. An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices
Published: 9/1/2008
Authors: Yun Wang, Kin P Cheung, Y.J. Choi, Byoung Hun Lee
Abstract: Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offer ...

56. New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Published: 9/1/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate ...

57. Negative-Bias Temperature Instability Induced Electron Trapping
Published: 7/21/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a ...

58. Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Published: 6/17/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and el ...

59. The Challenge of Measuring Defects in Nanoscale Dielectrics
Published: 5/26/2008
Authors: Kin P Cheung, John S Suehle
Abstract: Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In so ...

Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...

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