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Author: kin cheung

Displaying records 41 to 50 of 61 records.
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41. Distributed Numerical Modeling of Low Temperature MOSFET Operation
Published: 12/9/2009
Authors: Akin Akturk, M. Holloway, David J Gundlach, S. Potbhare, B Li, Neil Goldsman, M Peckerar, Kin P Cheung
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907169

42. Demonstration of a Wafer-level Hall-Mobility Measurement Technique
Published: 12/3/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905433

43. A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Published: 10/21/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, Kuang Sheng
Abstract: Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905424

44. An Improved Fast I^d d ^-V ^d g Measurement Technology With Expanded Application Range
Published: 10/19/2009
Authors: Chen Wang, Liangchun Yu, Jason P Campbell, Kin P Cheung, Yi Xuan, Peide Ye, John S Suehle, David Zhang
Abstract: Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this pape ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904155

45. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/16/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907098

46. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published: 10/14/2009
Authors: Liangchun Yu, Kin P Cheung, Greg Dunne, Kevin Matocha, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907099

47. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/11/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

48. Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs
Published: 5/18/2009
Authors: Jason P Campbell, Liangchun Yu, Kin P Cheung, Jin Qin, John S Suehle, A Oates, Kuang Sheng
Abstract: We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902184

49. The Negative Bias Temperature Instability vs. High-Field Stress Paradigm
Published: 5/18/2009
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradatio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902213

50. Random Telegraph Noise in Highly Scaled nMOSFETs
Published: 4/26/2009
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901584



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