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Author: kin cheung

Displaying records 41 to 50 of 65 records.
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41. New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device
Published: 6/1/2010
Authors: Jason P Campbell, Kin P Cheung, Liangchun Yu, John S Suehle, Kuang Sheng, A Oates
Abstract: A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extractio ...

42. Frequency-Dependent Charge-Pumping: The Depth Question Revisited
Published: 5/1/2010
Authors: Fan Zhang, Kin P Cheung, Jason P Campbell, John S Suehle
Abstract: A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship betw ...

43. On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published: 4/26/2010
Author: Kin P Cheung
Abstract: The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofs ...

44. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...

45. Distributed Numerical Modeling of Low Temperature MOSFET Operation
Published: 12/9/2009
Authors: Akin Akturk, M. Holloway, David J Gundlach, S. Potbhare, B Li, Neil Goldsman, M Peckerar, Kin P Cheung

46. Demonstration of a Wafer-level Hall-Mobility Measurement Technique
Published: 12/3/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng

47. A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Published: 10/21/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, Kuang Sheng
Abstract: Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is ...

48. An Improved Fast I^d d ^-V ^d g Measurement Technology With Expanded Application Range
Published: 10/19/2009
Authors: Chen Wang, Liangchun Yu, Jason P Campbell, Kin P Cheung, Yi Xuan, Peide Ye, John S Suehle, David Zhang
Abstract: Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this pape ...

49. Wafer-level Hall Measurement on SiC MOSFET
Published: 10/16/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng

50. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published: 10/14/2009
Authors: Liangchun Yu, Kin P Cheung, Greg Dunne, Kevin Matocha, John S Suehle, Kuang Sheng

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